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  • 1
    Electronic Resource
    Electronic Resource
    Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4362-4366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the lattice-mismatch-induced defects on deep level traps in Ga0.92In0.08As(n+)/GaAs(p) heterojunction diodes have been studied by means of various deep level transient spectroscopy techniques and the frequency-dependent capacitance-voltage (C-V-f) characteristics. Three hole traps at 0.58, 0.42, and 0.27 eV were observed. We attribute the 0.42 eV trap to Cu impurity, the 0.58 eV trap to VGa or Fe, and the 0.27 eV trap to a complex associated with the 0.42 and 0.58 eV traps. Depth profiles of these hole traps in the GaAs side were measured in different lattice-mismatched samples. The depth profile data near the interface and from deep inside the bulk show evidence of impurity gettering by the mismatched interface. We also found that the concentrations of these traps were reduced by rapid thermal annealing. A U-shaped energy distribution of the interface states was obtained from the C-V-f measurements. For an in-plane mismatch greater than 0.25%, the interface state density shows no obvious dependence on the in-plane lattice mismatch, while at smaller mismatch the interface state density increases with increasing mismatch. The interface state density was on the order of 1011 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352821
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  • 2
    Electronic Resource
    Electronic Resource
    Interface traps in InP/InAlGaAs p-n junctions by metal organic chemical vapor deposition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5736-5738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the deep levels in the lattice-matched InP/(InAlGa)As heterojunction system. Five p-n junction samples were grown by metalorganic chemical vapor deposition with varied Al composition of 0%, 16%, 36%, 45%, and 55%. A vacancy-related deep electron trap was found at the InP/(InAlGa)As interface. This trap has less concentration in the sample with higher Al composition, and is not observed when Al composition is greater than 55%. Its activation energy within the band gap increases with the increasing Al composition. The trap can be eliminated by rapid thermal annealing at 700 °C. Current-voltage characteristics show that this trap acts as recombination centers under forward bias condition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359217
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  • 3
    Electronic Resource
    Electronic Resource
    Optical characterization of GaN films by photoreflectance and photocurrent measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7424-7426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the room temperature optical characterization of single crystal hexagonal GaN films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined to be 3.400 eV by photoreflectance and the possible origin of the photoreflectance signal is discussed. Photocurrent measurement exhibited a peak at 3.351 eV and a continued photoresponse through the ultraviolet region. We found that the intensity of photocurrent was dependent upon the chopper frequency in the measurement. Absorption coefficient and film thickness were obtained from the optical transmission spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360400
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  • 4
    Electronic Resource
    Electronic Resource
    Phosphorus-vacancy-related deep levels in GaInP layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1587-1590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in lattice-matched Ga0.51In0.49P/GaAs heterostructure have been investigated by thermal-electric effect spectroscopy (TEES) and temperature-dependent conductivity measurements. Four samples were grown by molecular-beam epitaxy with various phosphorus (P2) beam-equivalent pressures (BEP) of 0.125, 0.5, 2, and 4×10−4 Torr. A phosphorus vacancy (VP) -related deep level, an electron trap, was observed located at EC−0.28±0.02 eV. This trap dominated the conduction-band conduction at T(approximately-greater-than)220 K and was responsible for the variable-range hopping conduction when T〈220 K. Its concentration decreased with the increasing phosphorous BEP. Successive rapid thermal annealing showed that its concentration increased with the increasing annealing temperature. Another electron trap at EC−0.51 eV was also observed only in samples with P2 BEP less than 2×10−4 Torr. Its capture cross section was 4.5×10−15 cm2. This trap is attributed to VP-related complexes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358911
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  • 5
    Electronic Resource
    Electronic Resource
    Contact-related deep states in the Al-GaInP/GaAs interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 989-993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels have been measured in a molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold (Au) and aluminum (Al) metals were used for a Schottky contact. A contact-related hole trap with an activation energy of 0.50–0.75 eV was observed at the Al/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28 eV was also observed in both Au- and Al-Schottky diodes. It depth profile showed that it is a bulk trap in a GaInP epilayer. The temperature dependent current-voltage characteristics show a large interface recombination current at the GaInP surface due to the Al contact. The energy distribution of the interface state density showed a maximum at EV+0.85 eV within the band gap. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450 °C after aluminum deposition. The Al Schottky barrier height also increased after a 450 °C annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356456
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  • 6
    Electronic Resource
    Electronic Resource
    A simple and reliable method of thermoelectic effect spectroscopy for semi-insulating III-V semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1951-1954 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a simpler and more reliable method of thermoelectric effect spectroscopy (TEES), eliminating the second heater in the technique. We have applied this method to the deep level studies in the semi-insulating undoped or Cr-doped GaAs materials and in the GaAs epitaxial layers grown at a low temperature by molecular beam epitaxy. We have found that the electrical contacts made on front and back surfaces of the sample are more reliable for the TEES measurement than both contacts made on the same surface. In this contact arrangement, the temperature difference of about 1–2 K between the back and front surfaces is enough to produce a clear and reliable TEES data, without the need for a second heater. The results obtained by TEES are consistent with the results obtained by photoinduced transient spectroscopy (PITS) and by thermally stimulated current (TSC) measurements. The TEES results clearly distinguish between the electron traps and the hole traps. We discuss the results on the various semi-insulating GaAs samples and the advantages and limitations of the TEES technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142398
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  • 7
    Electronic Resource
    Electronic Resource
    Optical quenching of photoconductivity in GaN photoconductors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2707-2709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The observation of optical quenching of photoconductivity in GaN photoconductors at room temperature is reported on. Three prominent quenching bands were found at Ev+1.44, 1.58, and 2.20 eV, respectively. These levels are related to three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He–Ne laser shining on the photoconductor. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366090
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  • 8
    Electronic Resource
    Electronic Resource
    Direct observation of transferred-electron effect in GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2825-2826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct observation of transferred-electron effect in unintentionally doped GaN epilayers grown by metalorganic chemical vapor deposition. The negative differential resistivity (NDR) was observed from the current-electric field characteristics in GaN using a metal-semiconductor-metal (M-S-M) system. The threshold field for the onset of NDR was independent of the spacing of M-S-M fingers, and was measured to be 1.91×105 V/cm for GaN with an n-type carrier concentration of 1014 cm−3. This value is very close to the value obtained from theoretical simulation. This observation is an experimental evidence of transferred-electron effects in GaN, which is important in understanding GaN energy band structure and in the application of Gunn-effect devices using GaN materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114797
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  • 9
    Electronic Resource
    Electronic Resource
    Deep-level-free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2745-2747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se) doping (8.4×1016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep-level transient spectroscopy. We have found that the commonly observed oxygen contamination-related deep levels at EC−0.53 and 0.70 eV and germanium-related level at EC−0.30 eV in MOCVD-grown Al0.22Ga0.78As can be eliminated by Se doping. In addition, a deep hole level located at EV+0.65 eV was found in highly Se-doped Al0.22Ga0.78As epilayers. We suggest that low Se doping (〈2×1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113695
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