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  • 1
    Electronic Resource
    Electronic Resource
    Phosphorus-vacancy-related deep levels in GaInP layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1587-1590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in lattice-matched Ga0.51In0.49P/GaAs heterostructure have been investigated by thermal-electric effect spectroscopy (TEES) and temperature-dependent conductivity measurements. Four samples were grown by molecular-beam epitaxy with various phosphorus (P2) beam-equivalent pressures (BEP) of 0.125, 0.5, 2, and 4×10−4 Torr. A phosphorus vacancy (VP) -related deep level, an electron trap, was observed located at EC−0.28±0.02 eV. This trap dominated the conduction-band conduction at T(approximately-greater-than)220 K and was responsible for the variable-range hopping conduction when T〈220 K. Its concentration decreased with the increasing phosphorous BEP. Successive rapid thermal annealing showed that its concentration increased with the increasing annealing temperature. Another electron trap at EC−0.51 eV was also observed only in samples with P2 BEP less than 2×10−4 Torr. Its capture cross section was 4.5×10−15 cm2. This trap is attributed to VP-related complexes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358911
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  • 2
    Electronic Resource
    Electronic Resource
    Single quantum well GaAs/AlGaAs separate confinement heterostructure lasers with n-type modulation doped cores (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2851-2853 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separate confinement heterostructure single quantum well GaAs/AlGaAs lasers with n-type modulation doped active regions are studied. Quantum well absorption is significantly modified by n-type modulation doping. The effects of modulation doping on transparency current density and threshold current density are determined. Modulation doping is shown to reduce transparency current density, thereby also reducing threshold current density. Threshold current densities are reduced by 30%, to values of less than 150 A/cm2 for long cavities. The effects on distributed loss and differential gain are also reported. No degradation of laser performance is observed due to the location of the electrical junction away from the active region or due to free carrier absorption loss. Heavily modulation doped structures lase on the second quantized state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108054
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  • 3
    Electronic Resource
    Electronic Resource
    Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 342-344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a new method for the generation of phosphorus beams in molecular beam epitaxy: the use of a valved, solid cracker source. The valved solid source avoids previous difficulties associated with the use of solid phosphorus, and provides an attractive alternative to the use of phosphine. The use of red phosphorus does not interfere with the subsequent growth of high quality arsenides in the same growth chamber. The performance of this valved phosphorus source is illustrated by the growth of two ternary phosphides, Ga0.5In0.5P and Al0.5In0.5P. The quality of the phosphides reported here is comparable to the best results reported by other growth techniques. The effects of composition, growth temperature, and P2 flux on the films' characteristics are reported. Indium desorption during growth is found to be substantially greater in AlInP than in GaInP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105590
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  • 4
    Electronic Resource
    Electronic Resource
    Interface traps and interface recombination in AlGaAs/GaAs quantum well laser diodes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 428-430 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage characteristics and deep traps of various GaAs/AlGaAs graded-index separate confinement heterostructure quantum well laser diode structures are studied as a function of the growth temperature and threshold current. It is shown that the interface nonradiative recombination processes cause a high threshold current. An impurity-related deep level with activation energy Ea=0.48 eV at the interface region and an interface state with wide energy distribution were found in the high threshold current diodes. The current-voltage characteristics show that interface recombination, rather than bulk recombination, is the dominant carrier transport process in the diodes and is responsible for the high threshold current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106624
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