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  • 1
    Electronic Resource
    Electronic Resource
    Phosphorus-vacancy-related deep levels in GaInP layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1587-1590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in lattice-matched Ga0.51In0.49P/GaAs heterostructure have been investigated by thermal-electric effect spectroscopy (TEES) and temperature-dependent conductivity measurements. Four samples were grown by molecular-beam epitaxy with various phosphorus (P2) beam-equivalent pressures (BEP) of 0.125, 0.5, 2, and 4×10−4 Torr. A phosphorus vacancy (VP) -related deep level, an electron trap, was observed located at EC−0.28±0.02 eV. This trap dominated the conduction-band conduction at T(approximately-greater-than)220 K and was responsible for the variable-range hopping conduction when T〈220 K. Its concentration decreased with the increasing phosphorous BEP. Successive rapid thermal annealing showed that its concentration increased with the increasing annealing temperature. Another electron trap at EC−0.51 eV was also observed only in samples with P2 BEP less than 2×10−4 Torr. Its capture cross section was 4.5×10−15 cm2. This trap is attributed to VP-related complexes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358911
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  • 2
    Electronic Resource
    Electronic Resource
    Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 342-344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a new method for the generation of phosphorus beams in molecular beam epitaxy: the use of a valved, solid cracker source. The valved solid source avoids previous difficulties associated with the use of solid phosphorus, and provides an attractive alternative to the use of phosphine. The use of red phosphorus does not interfere with the subsequent growth of high quality arsenides in the same growth chamber. The performance of this valved phosphorus source is illustrated by the growth of two ternary phosphides, Ga0.5In0.5P and Al0.5In0.5P. The quality of the phosphides reported here is comparable to the best results reported by other growth techniques. The effects of composition, growth temperature, and P2 flux on the films' characteristics are reported. Indium desorption during growth is found to be substantially greater in AlInP than in GaInP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105590
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  • 3
    Electronic Resource
    Electronic Resource
    Beryllium diffusion in GaAs/AlGaAs single quantum well separate confinement heterostructure laser active regions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2786-2788 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium (Be) diffusion into the active layers of single quantum well separate confinement heterostructure lasers grown by molecular beam epitaxy is investigated using photoluminescence absorption spectroscopy, secondary ion mass spectroscopy, capacitance–voltage profiling, and laser threshold current measurements. A significant amount of Be diffusion occurs under normal growth conditions. Large concentrations of Be in the quantum well are correlated to the lack of an exciton feature in the absorption spectrum. The amount of Be in the active region is reduced through a combination of lower Be concentration and lower growth temperature in the upper cladding region of the laser. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113475
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