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  • 1
    Electronic Resource
    Electronic Resource
    Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4362-4366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the lattice-mismatch-induced defects on deep level traps in Ga0.92In0.08As(n+)/GaAs(p) heterojunction diodes have been studied by means of various deep level transient spectroscopy techniques and the frequency-dependent capacitance-voltage (C-V-f) characteristics. Three hole traps at 0.58, 0.42, and 0.27 eV were observed. We attribute the 0.42 eV trap to Cu impurity, the 0.58 eV trap to VGa or Fe, and the 0.27 eV trap to a complex associated with the 0.42 and 0.58 eV traps. Depth profiles of these hole traps in the GaAs side were measured in different lattice-mismatched samples. The depth profile data near the interface and from deep inside the bulk show evidence of impurity gettering by the mismatched interface. We also found that the concentrations of these traps were reduced by rapid thermal annealing. A U-shaped energy distribution of the interface states was obtained from the C-V-f measurements. For an in-plane mismatch greater than 0.25%, the interface state density shows no obvious dependence on the in-plane lattice mismatch, while at smaller mismatch the interface state density increases with increasing mismatch. The interface state density was on the order of 1011 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352821
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  • 2
    Electronic Resource
    Electronic Resource
    Control of surface states in GaSb/AlxGa1−xAsySb1−y/GaxIn1−xSb/AlxGa1−xAsySb1−y quantum well structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSb-based lasers show advanced capabilities over other material for the far-infrared wavelength range. However, for quantum-well (QW) laser structures of AlxGa1−xAsySb1−y/GaxIn1−xAsySb1−y/AlxGa1−xAsySb1−y grown on GaSb, each component element etches at a different rate, making it difficult to achieve quality surfaces sufficiently free of defects. Thus, in this letter, the effects on the surface quality of GaSb-based laser materials have been studied using phosphoric acid etching, boron trichloride reactive ion etching (RIE), and a postetch sulfur treatment. In addition, the quality of the surface is compared for two barriers of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93, based on current–voltage measurements as a function of temperature. The best surfaces were produced by RIE and by using as much Ga in the barriers as the device operation allows. A generation center in the Ga0.81In0.19As0.12Sb0.88 was found at 0.14 eV for QW diodes with low surface conduction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125147
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  • 3
    Electronic Resource
    Electronic Resource
    Deep level capture barrier in molecular beam epitaxial grown AlAsySb1−y measured by isothermal capacitance transient spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 506-508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improved isothermal capacitance transient spectroscopy (ICTS), which measures the entire capacitance transient as a function of time and temperature in a single temperature scan, has been implemented in a deep level trap analysis extending the characterization to include capture barrier measurement. This method eliminates inaccuracies introduced by narrow pulse widths that are difficult to reproduce accurately, providing capture barrier information more accurately and easily in addition to the usual deep level characteristics. A method of establishing ICTS experimental conditions and a method of analyzing the resulting data are described and applied to the investigation of deep levels in Te-doped AlAs0.07Sb0.93. The sample shows a single DX center trap having a deep level energy of 278 meV, a high temperature capture cross section of 1.3×10−12 cm2, and a capture barrier energy of 137 meV, clearly demonstrating the superior method of measuring a capture barrier. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119592
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  • 4
    Electronic Resource
    Electronic Resource
    Interface states in regrown GaAs p-n junctions by selective molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 297-299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first evaluation of interface states present in GaAs p-n junctions regrown on a SiO2 masked substrate by selective molecular beam epitaxy. A constant-capacitance deep-level transient spectroscopy (CC-DLTS) method is extended to the regrown p-n junction case, and a technique to distinguish the DLTS signal emerging from bulk and interface states is employed. The extracted interface state density is in good agreement with predictions based on the unified disorder-induced gap state model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107917
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