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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 53 (1981), S. 2060-2067 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 1401-1404 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 7369-7371 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 192-197 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of as-grown and rapid thermal oxidized Si1−x−yGexCy epitaxial layers have been examined using a combination of infrared, x-ray photoelectron, x-ray diffraction, secondary ion mass spectroscopy, and Raman spectroscopy techniques. Carbon incorporation into the Si1−x−yGexCy system can lead to compressive or tensile strain in the film. The structural properties of the oxidized Si1−x−yGexCy film depend on the type of strain (i.e., carbon concentration) of the as-prepared film. For compressive or fully compensated films, the oxidation process drastically reduces the carbon content so that the oxidized films closely resemble to Si1−xGex films. For tensile films, two broad regions, one with carbon content higher and the other lower than that required for full strain compensation, coexist in the oxidized films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1388-1390 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An x-ray diffraction study was carried out on the crystal structure of the high pressure phases of bismuth, Bi III, Bi III', and Bi IV, using high-energy monochromatic synchrotron radiation from the TRISTAN Accumulation Ring (6.5 GeV). Powdered samples were compressed in a cubic-type multianvil press MAX80 at pressures ranging from 3 to 6 GPa. In some compression runs, the sample temperature was raised up to 550 K. It was possible to obtain diffraction patterns containing many diffraction peaks and assign unambiguously indices to them. The crystal structure of Bi III is tetragonal with ten atoms contained in the unit cell. It has been shown that, when pressure is increased across the transition pressure between Bi III and Bi III', no change in the diffraction pattern takes place, indicating that the two phases have the same structure. Bi IV which exists in the high temperature region in the P-T diagram has been shown to have the structure with a monoclinic symmetry and eight atoms in the unit cell. All the structures determined can be regarded as a distorted body-centered-cubic lattice structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3118-3124 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stress measurements of a-Ge:H thin films deposited by rf glow discharge using a large variety of deposition conditions are reported. It was observed that the stress of the films is strongly related to their structure. Tensile films are usually porous or have many defects, while compressive films are usually homogeneous. High quality films are always compressive. A strong correlation of the stress in the films with the unbonded hydrogen concentration was observed, which may explain the origin of the compressive stress. There was no systematic or consistent link between the stress and the bonded hydrogen content or the deposition rate. The thermal expansion coefficient and the elastic constant were determined for high quality films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5191-5195 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The steady state photocarrier grating measurement technique has been used and is shown to be valid for the characterization of steady-state transport properties of minority carriers in undoped improved quality hydrogenated amorphous germanium (a-Ge:H). Deviations from the theoretically predicted behavior of the measurement have been observed on some a-Ge:H samples. At room temperature in a-Ge:H, the ratio of photoconductivity to dark conductivity is less than 1. The high density of thermally generated carrier is observed to affect the measurement by reducing its sensitivity. Whether it is also the cause of the observed deviation will be discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2308-2314 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the densification of radio frequency sputtered silicon oxide films by rapid thermal annealing was undertaken using both physical (etching, refractive index, and density calculation) and structural [infrared and x-ray photoelectron spectroscopy (XPS)] techniques. It was discovered that the etch rate of annealed films is reduced drastically, compared with as-deposited films and that the refractive index increases with increasing annealing temperature (Tp) or annealing time (tp). The film density also increases as Tp or tp increases and we conclude that annealed films have become denser as compared to the as-deposited films. We also suggest that increasing tp would be more efficient than raising Tp for film densification. Infrared spectrum analysis results show that with increasing Tp or tp, strain in the films has become more relaxed, and a significant amount of the surface hydroxyl groups in the annealed films was removed. The XPS analysis results show that a substantial amount of suboxide species exist within 30–40 Å of the oxide at the Si–SiO2 interface and that the Si–SiO2 interface is not abrupt. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1845-1847 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mirror-like Tl2Ba2CaCu2O8 thin films have been reproducibly prepared on (001)LaAlO3 substrates by dc magnetron sputtering using 80% argon and 20% oxygen and post-annealing at temperatures of 720–760 °C in 1 atm pure argon. X-ray diffraction patterns of θ-2θ scans, φ scans, and Read camera photographs prove that the thin films are strongly textured with the c-axis perpendicular to the substrate surfaces and epitaxially grown to the substrate with Tl2Ba2CaCu2O8(100) parallel to the LaAlO3(100). The zero resistance temperatures are in the range of 105.2–108.6 K for the 0.2–1.0-μm-thick films. The critical current density of 5.3×106 A/cm2 at 77 K has been obtained at zero magnetic field for a 0.4-μm-thick film.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2182-2184 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline germanium films containing erbium were deposited by thermal evaporation under 0.6 Torr of argon onto crystalline silicon wafer substrates. Weak broad photoluminescence (PL) around 1.5 μm was observed at room temperature. Annealing under 10−7 Torr of vacuum for 3 h at 500 °C produced no change in the PL spectrum. After 1 h oxidation in air at 500 °C the PL intensity increased by an order of magnitude with reduction of the spectral linewidth and appearance of distinct structures, a portion of which is similar to that observed for Er-implanted Si:O. Subsequent increase in oxidation time reduced the PL intensity slightly with no change in the spectral shape. The PL intensity exhibits a sublinear increase with pump power and approaches saturation at 200 mW. Raman spectra before and after anneal are also presented. Annealing increased the average grain size from 5 to 10 nm. The PL spectrum of erbium metal after oxidation in air at 500 °C is quite different from that of these oxidized Ge:Er films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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