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  • 1
    Electronic Resource
    Electronic Resource
    Design of gate-confined quantum-dot structures in the few-electron regime (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1050-1057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations for the design of gated delta-doped AlGaAs/GaAs quantum-dot structures in the few-electron regime are presented. The confining potential is obtained from the Poisson equation with a Thomas–Fermi charge model. The electronic states in the quantum dot are then obtained from solutions of the axisymmetric Schrödinger equation. Our model takes into account the effect of surface states by viewing the exposed surface as the interface between the semiconductor and air (or vacuum). Various gate configurations and biasing modes are explored. The simulations show that the number of electrons can be effectively controlled in the few-electron regime with combined enhancement and depletion gates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360339
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Coupled finite element/boundary element method for semiconductor quantum devices with exposed surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2545-2554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the boundary conditions for the potential at exposed semiconductor surfaces in split-gate structures, which views the exposed surface as the interface between the semiconductor and air. A two-dimensional numerical algorithm is presented for the coupling between the nonlinear Poisson equation in the semiconductor (finite element method) and Laplace's equation in the dielectric (boundary element method). The utility of the coupling method is demonstrated by simulating the potential distribution in an n-type AlGaAs/GaAs split-gate quantum wire structure within a semiclassical Thomas–Fermi charge model. We also present a comparison of our technique to more conventional Dirichlet and Neumann boundary conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356228
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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