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  • 1
    Electronic Resource
    Electronic Resource
    Coupled finite element/boundary element method for semiconductor quantum devices with exposed surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2545-2554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the boundary conditions for the potential at exposed semiconductor surfaces in split-gate structures, which views the exposed surface as the interface between the semiconductor and air. A two-dimensional numerical algorithm is presented for the coupling between the nonlinear Poisson equation in the semiconductor (finite element method) and Laplace's equation in the dielectric (boundary element method). The utility of the coupling method is demonstrated by simulating the potential distribution in an n-type AlGaAs/GaAs split-gate quantum wire structure within a semiclassical Thomas–Fermi charge model. We also present a comparison of our technique to more conventional Dirichlet and Neumann boundary conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356228
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    An eigenvalue method for open-boundary quantum transmission problems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2177-2186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a numerical technique for open-boundary quantum transmission problems which yields, as the direct solutions of appropriate eigenvalue problems, the energies of (i) quasi-bound states and transmission poles, (ii) transmission ones, and (iii) transmission zeros. The eigenvalue problem results from reducing the inhomogeneous transmission problem to a homogeneous problem by forcing the in-coming source term to zero. This homogeneous problem can be transformed to a standard linear eigenvalue problem. By treating either the transmission amplitude t(E) or the reflection amplitude r(E) as the known source term, this method also can be used to calculate the positions of transmission zeros and ones. We demonstrate the utility of this technique with several examples, such as single- and double-barrier resonant tunneling and quantum waveguide systems, including t-stubs and loops. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360132
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    The quantum transmitting boundary method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6353-6359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical algorithm for the solution of the two-dimensional effective mass Schrödinger equation for current-carrying states is developed. Boundary conditions appropriate for such states are developed and a solution algorithm constructed that is based on the finite element method. The utility of the technique is illustrated by solving problems relevant to submicron semiconductor quantum device structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345156
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  • 4
    Electronic Resource
    Electronic Resource
    Vibration of a rigid disc on a transversely isotropic elastic half space (1982)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 6 (1982), S. 293-306 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Notes: The problem of a massless, rigid disc vibrating harmonically on a ‘constrained’ transversely isotropic elastic half space is considered. The material is called constrained because it is assumed that the elastic constants satisfy a certain equation. The problem for each mode of vibration is reduced to the solution of a Fredholm integral equation of the second kind. Results are presented to show the general effect of the material anisotropy.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610060303
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  • 5
    Electronic Resource
    Electronic Resource
    The numerical simulation of electron transmission through a two-dimensional quantum device by the finite element method (1990)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 29 (1990), S. 1527-1537 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: In this paper we present a method for numerically solving the Schrödinger equation for the problem of electron transmission through a quantum device defined on a two-dimensional domain. An important aspect of our formulation is the treatment of the boundary conditions at the contact-device interfaces, allowing the problem to be discretized on the device domain only. With the FEM aproach that we employ, the nature of the potential field does not effect the computational expense (for smoothly varying fields). We examine a sample problem of a symmetric cavity in a wave-guide structure.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620290710
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  • 6
    Electronic Resource
    Electronic Resource
    Modulated interfacial disorder scattering in quantum wells and its device applications (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 590-594 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We investigate the nature of the electronic states and transient transport in a single, selectively doped, GaAs quantum well where the dopants are confined near one of the interfaces. The electronic states are calculated from self-consistent solutions of the Schrödinger and Poisson equations and are used to compute the scattering rates for electrons interacting with the dopants. These scattering rates are then used in a Monte Carlo simulation to study the time-dependent decay of the momentum of an ensemble of electrons traveling parallel to the interface.We also investigate the momentum relaxation of electrons injected into the well under different transverse electric fields that skew the wavefunction towards one of the interfaces. When the wavefunction is skewed away from the doped interface, the momentum relaxation time (and hence the mobility) increases dramatically by three orders of magnitude. A device application of this phenomenon, namely the operation of a velocity modulation transistor (VMT), has been investigated, with special focus on the transistor's switching speed.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740141005
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    Paper (German National Licenses)
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