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  • 1
    Electronic Resource
    Electronic Resource
    Heavy metal gettering in silicon-on-insulator structures formed by oxygen implantation into silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2559-2563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gettering of chromium and copper metal impurities to the damaged regions surrounding an implanted buried oxide has been investigated. Cr tends to segregate to the surface Si-SiO2 interface; only a small fraction moves to the damaged regions surrounding the buried oxide. Cu segregates to the damaged regions more readily; in addition, a large fraction of the implanted Cu moves to a location several micrometers beneath the buried oxide layer. The buried oxide does not appear to stop the movement of the Cu.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335910
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Valence-level photofragmentation of gaseous Si(CH3)Cl3 and solid-state analogs studied with synchrotron radiation (1999)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 3714-3719 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociative photoionization channels of gaseous Si(CH3)Cl3 and ion desorption mechanisms of solid-state analogs following valence-level excitation have been investigated by means of photoionization mass spectroscopy, threshold photoelectron spectroscopy (TPES), and photon-stimulated ion desorption (PSID) using synchroton radiation. The adiabatic ionization threshold of the parent molecular ion was determined to be 11.18 eV, consistent with the value of 11.16 eV obtained from the TPES spectrum. An energy shift ∼0.8 eV toward lower binding energies for the orbitals of solid Si(CH3)Cl3 with respect to the gas phase values was observed. Two thresholds at 14.97 and 17.51 eV in the CH3+ photoionization efficiency spectrum are probably associated with the ionization of 2e″ and 11a1 orbitals, respectively. The H+ desorption threshold at 20.1 eV in the PSID spectrum may be attributed to the excitation of C 2s electron correlation states to the unoccupied states. The Cl+ desorption threshold at 19.9 eV is likely initiated by an Auger-stimulated desorption process.© 1999 American Institute of Physics. [S0021-9606(99)70731-2]
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.479651
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  • 3
    Electronic Resource
    Electronic Resource
    Water-soluble sulfonated phenolic resins. II. Surface property and effectiveness as a dispersing agent (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 57 (1995), S. 1205-1209 
    Details
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: This article presents the surface activeity of a synthetic sulfonated phenolic resin (SPR) and evaluates its performance in cement mortars. It is indicated that the prepared SPR has the characteristics of a polymeric surfactant that can decrease the surface tension of water. When resin was added into cement mortars, the resulting materials exhibited better workability, more consolidated stucture, and higher compressive strength than the untreated. Therefore, SPR could be used as a water reducing admixture for cementitious materails. In addition, resins with higher sulfonate group content and low molecular weight appear to be more effective. © 1995 John Wiley & Sons, Inc.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/app.1995.070571005
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetics of the reactions of OH with alkanes (1994)
    New York, NY : Wiley-Blackwell
    International Journal of Chemical Kinetics 26 (1994), S. 973-990 
    Details
    ISSN: 0538-8066
    Keywords: Chemistry ; Physical Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The rate coefficients for the reactions of OH with ethane (k1), propane (k2), n-butane (k3), iso-butane (k4), and n-pentane (k5) have been measured over the temperature range 212-380 K using the pulsed photolysis-laser induced fluorescence (PP-LIF) technique. The 298 K values are (2.43±0.20) × 10-13, (1.11 ± 0.08) × 10-12, (2.46 ± 0.15) × 10-12, (2.06 ± 0.14) × 10-12, and (4.10 ± 0.26) × 10-12 cm3 molecule-1 s-1 for k1, k2, k3, k4, and k5, respectively. The temperature dependence of k1 and k2 can be expressed in the Arrhenius form: k1 = (1.03 ± 0.07) × 10-11 exp[-(1110 ± 40)/T] and k2 = (1.01 ± 0.08) × 10-11 exp[-(660 ± 50)/T]. The Arrhenius plots for k3 - k5 were clearly curved and they were fit to three parameter expressions: k3 = (2.04 ± 0.05) × 10-17 T2 exp[(85 ± 10)/T] k4 = (9.32 ± 0.26) × 10-18 T2 exp[(275 ± 20)/T]; and k5 = (3.13 ± 0.25) × 10-17 T2 exp[(115 ± 30)/T]. The units of all rate constants are cm3 molecule-1 s-1 and the quoted uncertainties are at the 95% confidence level and include estimated systematic errors. The present measurements are in excellent agreement with previous studies and the best values for atmospheric calculations are recommended. © 1994 John Wiley & Sons, Inc.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/kin.550261003
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    Paper (German National Licenses)
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