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  • 1
    Electronic Resource
    Electronic Resource
    Electromagnetic modes and prism-film coupling in anisotropic planar waveguides of epitaxial (101) rutile thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7823-7830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optical waveguiding in single-crystal, epitaxial (101) oriented rutile (TiO2) thin films grown on (112¯0) sapphire (α-Al2O3) substrates using the metal-organic chemical vapor deposition technique. The electromagnetic field distributions and propagation constants for asymmetric planar waveguides composed of an anisotropic dielectric media applicable to these films are derived. Modifications to the prism-film coupling theory for this anisotropic case are also discussed. By application of this model to (101) oriented rutile thin films, we directly obtain values of the ordinary and extraordinary refractive indexes, n0 and ne, of the rutile thin films as well as film thicknesses. We obtain typical values of the refractive indexes (n0=2.5701±0.0005; ne=2.934±0.001) near to those for bulk rutile single crystals indicating the exceptional quality of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353931
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering and x-ray diffractometry studies of epitaxial TiO2 and VO2 thin films and multilayers on α-Al2O3(112¯0) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2841-2847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of TiO2 and VO2 single layers and TiO2/VO2 multilayers were grown on (112¯0) sapphire (α-Al2O3) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four-circle x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO2 and VO2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO2/VO2 multilayers are dominated by the VO2 layers with only minimal signature of the TiO2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO2 layers to resonant enhancement of the VO2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353036
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Phase relationships in Cu-O thin films prepared by sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3174-3176 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conditions for deposition of Cu and Cu-oxide thin films by reactive dc sputtering have been investigated by characterizing the crystal structure of growing films both during and immediately following deposition using an in situ x-ray diffraction technique. The relationship between sputtering conditions and the phases deposited was established for a variety of conditions. At each temperature studied, increasing the oxygen pressure in the system resulted in a systematic change in the phases deposited. Of significant importance was the identification of temperature-pressure regimes in which CuO was stable during deposition but reverted to Cu2O after the sputtering plasma was extinguished, suggesting a shift in the oxidizing potential in the plasma environment. These results also suggest that the in situ analysis technique may be ideally suited for the investigation of phase relationships and phase diagrams in other systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105775
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    Paper (German National Licenses)
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