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  • 1
    Electronic Resource
    Electronic Resource
    Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1104-1107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the effect of strain-induced indium clustering on the emission properties of InGaN/GaN multiple quantum wells grown with high indium composition by metalorganic chemical vapor deposition. Indium clustering confirmed by high-resolution transmission electron microscopy results in the redshift of the emission peak and the increase of the integrated photoluminescence (PL) intensity. We found that strong carrier localization in indium clustering induces the increases of the activation energy of PL integrated intensity, the temperature independence of PL decay profiles, and the intensity fluctuation of the cathodoluminescence images. All these observations suggest structurally and optically that the improved emission properties in the InGaN/GaN multiple quantum well with high indium composition are associated with the localized states in the strain-induced indium cluster. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427143
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1166-1170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of strain relaxation on structural and optical properties of the InGaN/GaN multiple quantum wells (MQWs) with high indium composition grown by metalorganic chemical vapor deposition was investigated. From photoluminescence and transmission electron microscopy (TEM), we found that within the MQWs, the formation of misfit dislocation affects the degradation of optical properties more than the formation of stacking faults. For the MQWs with indium composition above the critical indium composition on the formation of misfit dislocation, the position of the main emission peak is significantly affected by the increase of quantum well numbers compared to samples with indium composition below the critical indium composition. The origins of redshift by the increase of quantum well numbers is believed to be caused by the increase of indium segregation in the MQWs using high-resolution TEM and energy dispersive x-ray spectroscopy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429765
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1370-1372 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pit formation in III-nitride heterostructures such as InGaN/GaN and AlGaN/GaN grown by metalorganic chemical vapor deposition was characterized by transmission electron microscopy. The pit formation related with V defects has been reported in the InGaN/GaN multiple quantum well with high In composition [Appl. Phys. Lett. 79, 215 (2001)]. In this letter, we found that the mechanism of pit formation strongly depends on the indium and aluminum compositions in InxGa1-xN and AlxGa1-xN layers, respectively. By increasing the indium composition, the origin of pits is changed from the vertex of threading dislocations to the stacking mismatch boundaries induced by stacking faults and the three-dimensional island growth at the initial stage due to the large lattice mismatch. By increasing the aluminum composition, the origin of the pits also varied from the surface undulation due to the elastic misfit strain to the vertex of threading dislocations. In addition, several inversion domains observed in III nitrides result in pit formation in the surface of films. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454215
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  • 4
    Electronic Resource
    Electronic Resource
    Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 247-249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xN alloys were directly grown on sapphire substrate with a GaN nucleation layer. The degree of phase separation in the InGaN layer on sapphire substrate is maximized at higher growth temperature than for an InGaN layer grown on a thick GaN layer. For high indium composition, a superlattice-like stacking fault in the InxGa1−xN grown on sapphire substrate was detected by the selected area diffraction pattern and high-resolution transmission electron microscopy. The superlattice-like arrangement of stacking faults leads to the formation of split spots and the distance of split spots corresponds to the distance between stacking faults. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126939
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  • 5
    Electronic Resource
    Electronic Resource
    Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 799-801 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall effect and capacitance–voltage measurements confirm a conductive thin layer near the GaN/sapphire interface. The temperature-dependent Hall effect of the interface layer was directly measured at temperatures above 100 K, and the results were satisfactorily described by solving the Boltzmann transport equation with various scattering mechanisms. Transport occurs in the conduction band of the layer and is characterized by two dominant scattering mechanisms due to space charge and ionized impurity. The high acceptor density and large space charge effect are related with the dislocations in the interface layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446991
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  • 6
    Electronic Resource
    Electronic Resource
    Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 215-217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: V-defect formation of the InxGa1−xN/GaN multiple quantum wells (MQWs) grown on GaN layers with different threading dislocation (TD) densities was investigated. From cross-sectional transmission electron microscopy, we found that all V defects are not always connected with TDs at their bottom. By increasing the indium composition in the InxGa1−xN well layer or decreasing the TD density of the thick GaN layer, many V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation. Also, TD density in the thick GaN layer affects not only the origin of V-defect formation but also the critical indium composition of the InxGa1−xN well on the formation of V defects. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384906
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2594-2596 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaN/GaN multiple quantum wells (MQWs) grown with various growth interruptions between the InxGa1−xN well and GaN barrier by metalorganic chemical vapor deposition were investigated using photoluminescence (PL), high-resolution transmission electron microscopy, and energy filtered transmission electron microscopy (EFTEM). The integrated PL intensity of the MQWs with growth interruptions is abruptly reduced compared to that of the MQW without growth interruption. Also, as the interruption time increases the peak emission shows a continuous blueshift. Evidence of indium clustering is directly observed both by using an indium ratio map of the MQWs and from indium composition measurements along an InGaN well using EFTEM. The higher-intensity and lower-energy emission of light from the MQW grown without interruption showing indium clustering is believed to be caused by the recombination of excitons localized in indium clustering regions and the increased indium composition in these recombination centers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410362
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  • 8
    Electronic Resource
    Electronic Resource
    Phase transformations in mechanically alloyed Al3Ti (1996)
    Springer
    Journal of materials science 15 (1996), S. 1324-1326 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00240795
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