Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Magneto-photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1975-1979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence of AlxGa1−xAs/AlyGa1−yAs heterostructures has been performed in presence of high magnetic fields. Under the magnetic field the broad carbon related peak becomes resolved into several narrow peaks. Experimental results and a theoretical analysis based on the single band model suggest that these peaks are due to the recombination of free electrons with holes bound to neutral carbon atoms distributed in the several atomic layers in the well side of the interfaces of the heterostructures. Magnetic fields reduce the effects of interfacial roughness and make it possible to resolve the carbon related peak into several peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360170
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Light-emission phenomena from porous silicon: Siloxene compounds and quantum size effect (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8060-8065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has long been argued whether the luminescent mechanism of anodized porous silicon is mainly due to the chemical compounds such as siloxene derivatives, or the quantum size effect. We performed a comprehensive study using atomic force microscope, infrared transmission, Raman scattering, and photoluminescence measurements in terms of various annealing temperatures. Low - temperature photoluminescence spectra have also been observed. This leads us to conclude that not only the siloxene derivatives but also the quantum size effect gives the luminescence in porous silicon. The previous pseudopotential calculations are used for the explanation of our experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356547
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5642-5646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells were investigated by using photoluminescence, transmission electron microscopy, optical microscopy, and high resolution x-ray diffraction. The InxGa1−xN/GaN (x〉0.2) quantum wells used in this study were grown on c-plane sapphire by using metalorganic chemical vapor deposition. The interruption was carried out by closing the group-III metalorganic sources before and after the growths of the InGaN quantum well layers. The transmission electron microscopy images show that with increasing interruption time, the quantum-dot-like regions and well thickness decreased due to indium reevaporation or the thermal etching effect. As a result the photoluminescence peak position was blueshifted and the intensity was reduced. Temperature- and excitation-power-dependent photoluminescence spectra support the results of transmission electron microscopy measurements. The sizes and the number of V defects did not differ with the interruption time. The interruption time is not directly related to the formation of defects. The V defect originates at threading dislocations and inversion domain boundaries due to higher misfit strain. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410320
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Optical characterization of Cd1−xMnxTe epilayers grown by liquid-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1023-1028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epilayers of Cd1−xMnxTe grown on CdTe substrates by liquid-phase epitaxy (LPE) are characterized by x-ray, modulated (piezo- or photo-) reflectivity, and Raman spectroscopy. The epilayers are found to be of excellent structural quality, having sharp excitonic signatures in the reflectivity spectra and highly uniform Mn concentrations. Intentional introduction of In donors during LPE growth of Cd1−xMnxTe has been verified by spin-flip Raman signals which show large Raman shifts with a Brillouin function behavior characteristic of donors in diluted magnetic semiconductors. During the LPE growth we also encountered the formation of large-area, free-standing platelets of Cd1−xMnxTe. They have been similarly characterized with x-rays, as well as modulation and Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346739
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Temperature induced blue shift and broadening of intersubband absorption and photocurrent spectra in GaAs/Al0.3Ga0.7As multiple quantum wells (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4394-4399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature induced blue shift of the intersubband absorption peak in GaAs/Al0.3Ga0.7As multiple quantum wells has been observed and calculated as a function of well thickness (Lw). As the temperature is lowered from 290 to 10 K, the absorption peak shifts to the higher energy by 7.1 meV. Calculation shows that the change in the barrier height dominates the blue shift at small Lw while exchange interaction is important for large Lw. At 80 K, the photocurrent spectrum (PCS) at 0 V bias (Vb) is gradually reduced and cut off by the barrier. The bias induced forbidden transition from the ground state, E1, to the second excited state, E3, is observed in PCS. The broadening of full width at half maximum of PCS is related to the bias induced forbidden transition at small bias (0〈Vb〈0.2 V) and the reduction of the barrier height and tunneling lifetime at large bias (0.2〈Vb〈2 V). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366166
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Optical absorption and anomalous photoconductivity in undoped n-type GaN (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1021-1023 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity and optical absorption measurements were employed to analyze deep levels in undoped n-type GaN films grown on sapphire substrate by metalorganic chemical vapor deposition. At room temperature, the photoconductivity measurement exhibits a broad level at around 1.90 eV. Similarly, the optical absorption spectrum shows a deep level located at 1.87 eV within the band gap, which is best described by a transition from a donor charge-transfer level to the conduction band, according to Lucovsky theory. A persistent photoconductivity whose behavior is distinctive from that of previously reported work for n- or p-type GaN epitaxial films was observed. The photocurrent quenching and decreased dark current in the persistent photoconductivity effect suggest that metastable electron states are formed in the band gap to trap electrons which tunnel out the potential barrier with long recovery time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125944
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1149-1151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-band model involving the heavy- and light-hole bands was adopted to analyze the temperature-dependent Hall effect measured on Mg-doped p-type GaN epilayers. At 300 K, the hole concentration was determined to be nearly twice the Hall concentration estimated from the measured Hall coefficient, meanwhile the Hall mobility of heavy hole turned out to be only half of the measured one. It is shown that the scattering by space charge and acoustic deformation potential is anomalously enhanced in Mg-doped GaN, and that the light hole affects conspicuously the observed transport parameters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125966
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1001-1003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: P-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentration. Temperature-dependent Hall effects show that the thermal activation energy of the acceptor (EA) is strongly dependent on the acceptor density (NA), approximated by EA(0)=372−1.16×10−18 NA meV at 0 K. A strong temperature dependence of EA was also obtained in this study. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448666
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3007-3009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited on the unstrained and strained Si substrates by an electron cyclotron resonance plasma source. The photoluminescence spectra show that emission energies are different from each other. The redshift of photoluminescence induced by the biaxial tensile stress is increased with decreasing the temperature in the range of 0.11–0.17 eV. The stress effect also enhances the quantum efficiency significantly. The pseudomorphic growth of Si on a relaxed Si0.75Ge0.25 (100) surface provides the strain energy of about 0.17 eV. These comparable results indicate that the shift of emission energy is attributed to the stress effect perturbing the polysilane structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120245
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Anomalous photoluminescence from 3C-SiC grown on Si(111) by rapid thermal chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystal 3C-SiC epitaxial films are grown on Si(111) surfaces using tetramethylsilane by rapid thermal chemical vapor deposition. Strong blue/green photoluminescence (PL) was observed at room temperature from the free films of SiC prepared by etching the Si substrate. The main PL peak energy varies from 2.1 to 2.4 eV with full widths at half-maximum between 450 and 500 meV, depending on the growth condition, excitation wavelength and excitation light intensity. A weak peak at 3.0 eV also appeared. The infrared (IR) spectra of free films of SiC exhibit modes associated with CH and OH groups. We also compared PL characteristics of free films of SiC with those from porous SiC produced by anodization of SiC/Si to determine the origin of the PL. Porous SiC shows a PL peak centered at 1.9 eV, different from those in SiC. From the analysis of the IR spectra and scanning electron microscopic images, we tentatively suggest that the origin of the PL from free films of SiC might be associated with an OH group adsorbed on defects or some localized states as is the case for an amorphous SixC1−x alloy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118648
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...