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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 8748-8750 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6726-6733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al0.48In0.52As layers grown on n+-InP substrates by molecular beam epitaxy (MBE) and metal-organic chemical-vapor deposition (MOCVD), as a function of substrate temperature, have been characterized by current-voltage-temperature, capacitance-voltage, deep-level transient spectroscopy, and admittance spectroscopy measurements. It was found that for diodes formed on MOCVD-AlInAs the current in forward bias is dominated by thermionic emission and the reverse current by recombination through the residual midgap states; whereas, for MBE-AlInAs diodes, the respective currents are dominated by defect-assisted tunneling at low forward and reverse biases. Schottky barrier heights were found to decrease with decreasing growth temperature. Three defect levels E1, E2, and E3 were observed in both material systems, and their densities were found to increase rapidly from ∼1012 to ∼1016 cm−3 as the growth temperature decreased from 740 to 500 °C. The decrease of barrier height and the appearance of the defect-assisted tunneling current at low bias were found to correlate with the increase of defect density. The high density of defects may be responsible for the low barrier heights and higher leakage currents previously observed in AlInAs/InGaAs/InP high electron mobility transistors though MOCVD growth provided high quality AlInAs layers.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4319-4323 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is focused on the study of the fine speckle contrast present in planar view observations of matched and mismatched InGaAs layers grown by molecular beam epitaxy on InP substrates. Our results provide experimental evidence of the evolution of this fine structure with the mismatch, layer thickness, and growth temperature. The correlation of the influence of all these parameters on the appearance of the contrast modulation points to the development of the fine structure during the growth. Moreover, as growth proceeds, this structure shows a dynamic behavior which depends on the intrinsic layer substrate stress.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2470-2471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular-beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2214-2226 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron momentum spectrometer has been constructed which measures electron binding energies and momenta by fully determining the kinematics of the incident, scattered, and ejected electrons resulting from (e,2e) ionizing collisions in a thin solid foil. The spectrometer operates with incident beam energies of 20–30 keV in an asymmetric, non-coplanar scattering geometry. Bethe ridge kinematics are used which for 20 keV incident energy has scattered electron energies of 18.8 keV at a polar angle of θs=14°and azimuthal angles φs in the range from −18° to +18° and ejected electrons of 1.2 keV and θe=76°with φe=π±6°. The technique uses transmission through the target foil, but it is most sensitive to the surface from which the 1.2 keV electrons emerge, to a depth of about 2 nm. Scattered and ejected electron energies and azimuthal angles are detected in parallel using position sensitive detection, yielding true coincidence count rates of 6 Hz from a 5.5 nm thick evaporated carbon target and an incident beam current of around 100 nA. The energy resolution is approximately 1.3 eV and momentum resolution approximately 0.15 a0−1. The energy resolution could readily be improved by monochromating the incident electron beam.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7876-7879 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous current–voltage studies of In contacts deposited on atomically clean (intimate) In53Ga47As(100) have indicated the potential to "select" barrier heights in this materials system by cryogenic processing. Soft x-ray photoemission spectroscopy was used to determine the electronic and chemical nature of these interfaces, as a function of formation temperature. Metallization at room temperature results in a predominantly three-dimensional mode of growth, accompanied by the outdiffusion of As. Low temperature metallization appears to reduce clustering and inhibit As outdiffusion. It is proposed that the distribution of surface states and the fermi level pinning position are altered by the changes that occur in the geometry and bonding of the interface at low temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 240-243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of admittance spectroscopy measurements on the lattice-matched In0.52Al0.48As/In0.53Ga0.47As single-quantum-well structures. It has been found that the perpendicular conductivity of the structure is controlled by the strong temperature dependence of the space-charge region width around the quantum-well layer. This process is governed by a high density of deep electron traps present in the layers adjacent to the quantum well. Therefore, the energy activation of perpendicular conductivity is determined by the deep-level defects rather than the thermionic emission of electrons from the quantum well. Because of this, it is impossible to extract the magnitude of the band offset between the quantum well and barrier layers from the admittance measurements performed in this study. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3393-3398 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The validity of optical absorption (OA) as a technique for the measurement of strain e11, alloy composition x, and relaxation in InxGa1−xAs epilayers on InP has been examined by comparison with similar measurements by double-crystal x-ray diffraction (DCXD). Provided that the strain arising from differences in the thermal contraction of the substrate and epilayer are taken into account, measurements of strain by OA show good agreement with DCXD results, with a dispersion of Δe11=±0.27×10−3. Comparison of alloy compositions given by the two techniques shows similarly good agreement, with a dispersion in the values of x of less than Δx=±0.7%. OA may also be used to determine lattice relaxation. The degree of uncertainty in the measurement of this parameter increases as lattice match is approached and decreases as the lattice relaxes. Our studies indicate that OA may be used as an independent technique to evaluate strain, alloy composition, and the degree of lattice relaxation in InxGa1−xAs epilayers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2481-2488 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and chemical properties of the interfaces formed at room temprature, between the surface of epitaxial n-type InyAl1−yAs(100) and a selection of metals have been studied. Highly ideal Au, Ag, Cu, and In diodes exhibiting the highest reported barriers (0.78–0.91 eV), measured by the current-voltage (I-V) technique, have been obtained by forming intimate contacts on atomically clean, lattice matched, molecular beam epitaxy grown InyAl1−yAs/InP(100). The formation of Au- and In-InyAl1−yAs interfaces has been investigated using x-ray photoemission spectroscopy, showing that in both cases the Fermi level is pinned at the surface prior to metal deposition. The deposition of both In and Au overlayers initiated the selective removal of As from the interface to segregate on the metal surface; however the presence of these metals on the semiconductor surface produced no further Fermi shift. These observations, in conjunction with the barrier heights measured by the I-V technique, are discussed in the context of currently supported models of Schottky barrier formation.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4018-4020 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectra and transmission electron microscopy (TEM) observations on InGaAs/InP layers under compressive strain are reported. From the band-gap energy dispersion, the magnitude of the strain inhomogeneities, σε, is quantified and its microscopic origin is analyzed in view of the layer microstructure. TEM observations reveal a dislocation network at the layer interface the density of which correlates with σε. It is concluded that local variations of dislocation density are responsible for the inhomogeneous strain field together with another mechanism that dominates when the dislocation density is very low. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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