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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 137-139 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of n-CdTe surfaces prepared by various chemical treatments has been studied by x-ray photoelectron spectroscopy. In parallel experiments Schottky barrier heights have been measured for Sb and Au contacts deposited on surfaces prepared in an identical manner. Reducing etches are found to leave the surface rich in Cd, and for these surfaces Sb and Au always produce barrier heights of 0.93±0.02 eV. Bromine in methanol solutions leaves the surface rich in Te and gives rise to two valued barrier heights of 0.93 and 0.72 eV. It is found that the probability of generating contacts with the higher value of barrier height increases as the surface becomes richer in Cd.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2623-2625 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed photoluminescence (PL) measurements on chemically etched single-crystal p-CdTe. In addition, x-ray photoemission measurements have been used as a guide to surface stoichiometry for each chemical treatment. The relative intensities of the 0.875±0.005 eV and 1.125±0.005 eV PL bands are seen to be linked to the preferential depletion of either Cd or Te from the CdTe surface. Furthermore, the energies of these deep level transitions measured at T=4 K show remarkable agreement with the two values of Schottky barrier, Φb=0.72±0.02 eV and Φb=0.93±0.02 eV, normally obtained at room temperature for Au and Sb contacts to n-CdTe.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7876-7879 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previous current–voltage studies of In contacts deposited on atomically clean (intimate) In53Ga47As(100) have indicated the potential to "select" barrier heights in this materials system by cryogenic processing. Soft x-ray photoemission spectroscopy was used to determine the electronic and chemical nature of these interfaces, as a function of formation temperature. Metallization at room temperature results in a predominantly three-dimensional mode of growth, accompanied by the outdiffusion of As. Low temperature metallization appears to reduce clustering and inhibit As outdiffusion. It is proposed that the distribution of surface states and the fermi level pinning position are altered by the changes that occur in the geometry and bonding of the interface at low temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract ZnSe layers have been grown by a low temperature (∼65 °C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD) and a photoelectrochemical (PEC) cell for determination of the bulk properties and electrical conductivity type. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Annealing at 250 °C for 15 min improves the crystallinity of the layers and the photoresponse of the ZnSe/electrolyte junction. © 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract CdS thin films as window materials for solar cells have been prepared by three procedures; chemical bath deposition, electrodeposition in an aqueous medium at 80 °C and electrodeposition in a non-aqueous medium at 170 °C. As deposited films along with those obtained after annealing in air at 400 °C for 15 min were studied using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), glow discharge optical emission spectroscopy (GDOES), scanning electron microscopy (SEM), optical absorption spectra and photoelectrochemical spectroscopy (PEC) techniques under identical experimental conditions. X-ray diffraction data indicate the formation of hexagonal CdS as the predominent phase, but the SEM studies show that their textures are widely dependent on the conditions employed. GDOES profiling indicates the incorporation of Na and Si into CdS films prepared by all three techniques. Annealing of chemical bath deposited films causes a red shift of the absorbance edge and also a shift in the maxima of the photocurrent action spectra towards the low energy side. However, this effect was comparatively negligible for the samples prepared by the other two techniques. PEC studies indicate that CdS materials grown by all three techniques are all n-type. All studies indicate that the films grown at 170 °C using non-aqueous solutions are of better crystallinity and of improved electrical properties. © 1998 Kluwer Academic Publishers
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (∼65°C) electrochemical technique, and characterized using X-ray diffractions (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and photo electrochemical cell (PEC) techniques. XRD shows that the material growth is highly preferential with (1 1 1) orientation. XPS work indicates that this material has a chemical and stoichiometric nature similar to that grown by molecular beam epitaxy. Annealing at ∼250°C for 15 min improves the crystallinity of the layers. PL studies indicate the presence of a low number of defect levels which causes radiative transitions within the energy region 0.7–1.4 eV below the conduction band, in the case of electrodeposited ZnSe when compared to MBE grown ZnSe. Optical properties of the thin films were characterized using a PEC cell arrangement and both n- and p-doping of the materials has been achieved successfully using Ga and As, respectively. The use of crystalline ZnSe layers in both simple p-n junctions and multi-layer solar cell structures shows encouraging results.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract ZnSe layers have been grown by a low temperature (∼65 °C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive analysis by X-rays (EDAX), glow discharge optical emission spectroscopy (GDOES) and X-ray fluorescence (XRF) for bulk material properties. A photo-electrochemical (PEC) cell and an optical absorption method have been used for determination of the electrical and optical properties of the thin films. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. The XPS spectra are similar to those of commercially available ZnSe and the EDAX, GDOES and XRF also indicate the presence of Zn and Se in the layers. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Optical absorption is maximum around 460 nm indicating a band gap of 2.7 eV. Annealing at 200 °C for 15 mins improves both the crystallinity of the layers and the photoresponse of the electrolyte/ZnSe liquid/solid Schottky junction. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 718-723 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The formation of Schottky barriers at the Sb/n-ZnSe interface has been investigated for a selected number of chemically etched n-ZnSe surfaces. Microscopic properties of the surfaces and interfaces have been observed with SEM, XPS, AES and SIMS, while the conventional I-V technique has been used to determine the macroscopic electrical properties. Both polycrystalline ZnSe wafers and molecular beam epitaxy-grown layers of n-ZnSe on n+-GaAs substrates were used for this investigation. Stoichiometric variations resulting from wet chemical etching of n-ZnSe were investigated using XPS, AES and SIMS techniques. The electrical properties of Sb contacts formed by vacuum evaporation on the etched surfaces were also determined. Possible intermixing at the Sb/n-ZnSe interface was studied using the SIMS imaging technique. The correlation between macroscopic electrical properties and microscopic interactions at the interface will be presented in this paper.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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