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  • 1
    Electronic Resource
    Electronic Resource
    Experimental observation of large room-temperature current gains in a Stark effect transistor (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1673-1675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental observation of room-temperature current gains as large as 50 in a novel transistor grown in the InAs/GaSb/AlSb material system. Due to the unique degree of flexibility this material system offers in choosing band alignments, the base and collector terminals are separated by a quantum barrier while electrons traveling between the emitter and collector terminals do not tunnel across any classically forbidden regions, even though a quasi-bound state exists in the quantum well collector. This asymmetry in current conduction between the terminals of the device leads to transistor action: applying a bias to the base terminal electrostatically modulates the emitter-collector current through Stark shifts of the energy levels in the quantum well collector, while the quantum barrier between the base and collector terminals suppresses the base current. Because transport through the structure is dependent on resonant transmission, this novel transistor holds promise for the fabrication of high-speed circuits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105107
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  • 2
    Electronic Resource
    Electronic Resource
    Experimental observation of negative differential resistance from an InAs/GaSb interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 683-685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance at room temperature from devices consisting of a single interface between n-type InAs and p-type GaSb. InAs and GaSb have a type II staggered band alignment; hence, the negative differential resistance arises from the same mechanism as in a p+-n+ tunnel diode. Room-temperature peak current densities of 8.2×104 A/cm2 and 4.2×104 A/cm2 were measured for structures with and without undoped spacer layers at the heterointerface, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103591
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  • 3
    Electronic Resource
    Electronic Resource
    Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2675-2677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a theoretical and experimental analysis of current transport in InAs/GaSb/InAs interband tunneling devices as a function of GaSb layer width. Our results demonstrate that current transport in these devices occurs not through simple ohmic conduction, as had been previously proposed, but via light-hole-like resonances in the GaSb valence band formed due to the imperfect matching of InAs conduction-band and GaSb valence-band wave functions at the InAs/GaSb interfaces. These resonances produce a strong dependence of the current-voltage characteristics on GaSb layer width that is both predicted theoretically and observed experimentally. Our results also suggest that coupling between InAs conduction-band and GaSb heavy-hole valence-band states is relatively unimportant in these devices. In addition, we have been able to obtain peak current densities of ∼9×104 A/cm2, significantly higher than any previously reported current densities for this structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104109
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  • 4
    Electronic Resource
    Electronic Resource
    Large peak current densities in novel resonant interband tunneling heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1257-1259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed negative differential resistance (NDR) and large peak current densities in a novel resonant interband tunneling structure grown by molecular beam epitaxy in the InAs/GaSb/AlSb material system. The structure consists of a thin AlSb barrier layer displaced from an InAs(n)/GaSp(p) interface. NDR is readily observable at room temperature with peak current densities greater than 105 A/cm2. The enhancement in peak current density relative to a structure with no AlSb barrier is consistent with the existence of a quasi-bound state in the region between the barrier and the InAs/GaAs interface. Furthermore, we demonstrate that by growing the AlSb layer on either the InAs or GaSb side of the interface, the quasi-bound state can be localized in either material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103502
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  • 5
    Electronic Resource
    Electronic Resource
    Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2861-2863 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≈3–5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113454
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2981-2983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoelectron spectroscopy (XPS) to measure the dependence of the InAs/GaSb valence band offset on both interface composition and growth order. Molecular beam epitaxy was used to grow InAs-on-GaSb and GaSb-on-InAs interfaces with both InSb-like and GaAs-like interface compositions. Analysis of XPS core level separations showed no dependence of the valence band offset on interface composition; however, a 90 meV increase in the valence band offset was observed for InAs grown on GaSb compared to GaSb grown on InAs. This difference is attributed to the extended nature of the InAs-on-GaSb interface. Results from analysis of an intentionally extended GaSb-on-InAs interface were consistent with this conclusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114250
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  • 7
    Electronic Resource
    Electronic Resource
    Reflection high energy electron diffraction observation of anion exchange reactions on InAs surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 259-262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used time-resolved reflection high energy electron diffraction (RHEED) measurements to study anion exchange reactions in molecular beam epitaxy (MBE) grown III-V semiconductors. In the experiment, InAs surfaces are exposed to Sbx fluxes and subsequent changes in the crystals RHEED patterns are examined. We find that when an InAs surface is initially exposed to an Sb flux the specular spot intensity first decreases, then recovers back toward its initial value. The shape of the intensity versus time curves is extremely reproducible if the absolute Sb flux and the Sb species are kept constant. The length of time required for the RHEED pattern to stabilize is much shorter for cracked Sb than for uncracked Sb. The RHEED dynamics are also faster if the total Sb flux increases. The behavior of the RHEED dynamics as a function of Sb flux and Sb species is consistent with the changes in the RHEED pattern being due to an Sb/As exchange reaction on the crystal's surface. The RHEED data are compared to previously published x-ray photoelectron spectroscopy (XPS) data which studied exchange reactions on InAs surfaces exposed to Sb fluxes. The XPS study confirmed that the incident Sb did indeed exchange with As in the epilayer and estimated the exposure time needed to complete the Sb/As exchange reaction. The time scales for exchange associated with the RHEED and XPS data are in good agreement. This further indicates that RHEED could be used to indirectly probe anion exchange reactions, potentially opening up several avenues of research ranging from basic materials science to MBE process control in manufacturing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355893
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  • 8
    Electronic Resource
    Electronic Resource
    p-type doping of gallium antimonide grown by molecular beam epitaxy using silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2256-2258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first effective p-type doping of molecular beam epitaxy (MBE) grown GaSb using silicon. The samples were grown by molecular beam epitaxy and characterized by Hall-effect measurements and photoluminescence. Room-temperature hole concentrations ranging from 4.0×1015 to 4.3×1018 cm−3 were obtained. Photoluminescence (PL) spectra undergo considerable broadening with increasing doping concentration, consistent with an impurity banding picture. Furthermore, the MBE-grown samples display only one of the two PL features found in a melt-grown substrate and no other satellites, suggesting higher material purity. This may be a direct benefit from the use of an antimony cracker, ultrahigh vacuum conditions, and high-purity elemental sources. The short-period strained-layer superlattice buffering scheme employed may have also contributed to better structural quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103907
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  • 9
    Electronic Resource
    Electronic Resource
    Identification of Meat from Game and Domestic Species (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 57 (1992), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Isoelectric focusing combined with specific enzyme staining for creatine kinase was used to characterize banding patterns in meat from pronghorn, mule deer, white-tailed deer, sheep, moose, pork, bison, elk, caribou, red deer, beef and goat. Processed and cooked pork was differentiated from all species and beef and elk were separated from pronghorn. It was not possible to differentiate beef from elk, or prong-horn from sheep. The inability to separate some game from some domestic species and the lability of the staining proteins after heating above 67°C limits the application of this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1992.tb05529.x
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  • 10
    Electronic Resource
    Electronic Resource
    Reproductive constraints on aggressive competition in female baboons (1995)
    [s.l.] : Nature Publishing Group
    Nature 373 (1995), S. 60-63 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Olive baboons at Gombe have been studied continuously since 19578 13 jjie National Park consists of a series of steep valleys that run down the rift escarpment to the shore of Lake Tanganyika14. The valley floors are filled with semi-evergreen forest, and the slopes and ridgetops are covered by ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/373060a0
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