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  • 1
    Electronic Resource
    Electronic Resource
    Low-voltage electrochromic device for photovoltaic-powered smart windows (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1226-1232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the properties of an all-solid-state electrochromic (EC) device that can be switched over a useful range of optical transmissions with voltages below 1 V. This switching voltage is smaller than required by other solid-state EC devices reported to date. We attribute the lower-than-normal switching voltage to the use of a thermally evaporated MgF2 thin film as the lithium ion conducting layer. Electrochemical impedance spectroscopy studies show that high lithium ion conductivity and low interfacial barriers for lithium exchange with the adjacent electrochromic and ion storage layers make MgF2 a good choice for the ion conductor in EC devices. This reduction in switching voltage is a first step toward powering an EC device by an integrated semitransparent single-junction photovoltaic (PV) cell. In a side-by-side bench test, where the EC device is connected to a semitransparent a-SiC:H PV cell having on open circuit voltage of 0.87 V, a relative transmission change in the EC device of 40% is achieved in less than 60 s. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363731
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  • 2
    Electronic Resource
    Electronic Resource
    High pressure Raman scattering studies on adamantane (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 6739-6744 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High pressure behavior of adamantane is investigated up to pressures of 26 GPa at ambient temperature using Raman spectroscopy. A detailed study of changes in the Raman spectrum of the C–H stretching modes across the disorder–order transition around 0.5 GPa is reported. Pressure dependence of the internal mode frequencies suggest two more subtle transitions around 2.8 GPa and 8.5 GPa, respectively, which are reversible. Evolution of spectra at higher pressures show evidence for another structural transition above 24 GPa. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.481227
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  • 3
    Electronic Resource
    Electronic Resource
    Low-power deposition of fluorinated microcrystalline silicon hydrogen alloy films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10−3 Ω−1 cm−1), high photoconductivity (∼10−4 Ω−1 cm−1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm−2) and hydrogen dilution (∼20%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343432
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  • 4
    Electronic Resource
    Electronic Resource
    Thermally stimulated current in p-type CuInSe2 thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1548-1551 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe a strong thermally stimulated current (TSC) in p-type CuInSe2 thin films at temperatures from 100 to 350 K. Annealing in air appears to passivate this TSC activity. The passivation is reversible, and the spectra may be partially recovered by reduction. We attribute the three dominant TSC structures to three energy levels, 35, 45, and 100 meV, and we believe that they are associated with intrinsic defects, i.e., vacancies and antisites which are also observed in photoluminescence. We identify oxygen compensation of donors as the cause of the improved transport in CuInSe2 after air annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336462
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of excitons on CdTe solar cells (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8786-8792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and doping-level dependence of CdTe solar cells is investigated, taking into account the involvement of excitons on photocurrent transport. We show that the density of excitons in CdTe is comparable with that of minority carriers at doping levels ≥1015 cm−3. From the investigation of the dark-saturation current, we show that the product of electron and hole concentrations at equilibrium is several orders of magnitude more than the square of the intrinsic carrier concentration. With this assumption, we have studied the effect of excitons on CdTe solar cells, and the effect is negative. CdTe solar cell performance with excitons included agrees well with existing experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373611
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  • 6
    Electronic Resource
    Electronic Resource
    Ion beam rehydrogenation and post-hydrogenation of a-Si:H (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1604-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the rehydrogenation and post-hydrogenation of a-Si:H using a Kaufman ion beam source. The achievement of an air-mass-one (AM1), photo-to-dark conductivity ratio of 5.6×105 with a rehydrogenated a-Si:H sample was reported earlier [Y. S. Tsuo, E. B. Smith, and S. K. Deb, Appl. Phys. Lett. 51, 1436 (1987)]. In this communication we report recent results of the rehydrogenation study and new results of a study of the post-hydrogenation of amorphous silicon deposited by glow discharge at 480 °C. AM1 photo-to-dark conductivity ratios as high as 9.5×106 (with a photoconductivity of 8.6×10−6 Ω cm−1) and 1.1×105 (with a photoconductivity of 6.3×10−6 Ω cm−1) have been obtained with a rehydrogenated sample and a post-hydrogenated sample, respectively. We also report the results of the hydrogen depth profile and photostability measurements of these samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341800
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  • 7
    Electronic Resource
    Electronic Resource
    Raman spectroscopic investigation of superconducting YBa2Cu3O7−x, semiconducting YBa2Cu3O6+x, and possible impurity phases (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 242-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman spectroscopic investigation of specimens of superconducting YBa2Cu3O7−x and of the possible impurity phases YBa2Cu3O6+x (semiconductor), Y2BaCuO5, Y2Cu2O5, BaCuO2, CuO, Y2O3, and BaCO3 indicates that in the range 100–700 cm−1, there are six characteristic lines belonging to the superconductor. At 13 K, these lines are at 150, 338, 441, 507, 590, and 644 cm−1. Comparison of the Raman spectra of the superconductor and the semiconductor indicates a mode stiffening of the pair at 338 and 441 cm−1, but a mode softening of the pair at 507 and 590 cm−1. A factor group analysis leads to a tentative assignment of the Raman and infrared allowed modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99651
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam hydrogenation of amorphous silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1436-1438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Kaufman ion beam source was used to implant hydrogen atoms into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. We found that the hydrogen atoms introduced by this low-energy (less than 700 eV) ion implantation method bonded predominantly as SiH. An air mass one, photo-to-dark-conductivity ratio as high as 5.6×105 has been obtained with hydrogen-implanted materials. No light-induced reduction of the photo- and dark conductivities has been observed in these materials after 20 h of AMl illumnination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98649
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  • 9
    Electronic Resource
    Electronic Resource
    Electric field and infrared-induced recovery of metastability in amorphous hydrogenated silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 998-1000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we investigate the difference between the bond breaking and the charge trapping model of the light-induced effect in amorphous hydrogenated silicon (a-Si:H). We also report the partial recovery from the light-induced effect in p-i-n solar cells by infrared illumination in the presence of an electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98788
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancement and stabilization of porous silicon photoluminescence by oxygen incorporation with a remote-plasma treatment (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1152-1154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a treatment that enhances and stabilizes the photoluminescence (PL) from porous Si films. Films prepared by anodization in a 50% HF/ethanol solution were annealed at 450 °C in vacuum, exposed to air, and then exposed to a remote-hydrogen plasma. Infrared absorption spectroscopy revealed that the concentration of oxygen, rather than hydrogen, was increased by the processing steps, and that silicon dihydride species had been eliminated from the surface. The PL from a treated film was initially ∼30 times more intense than from the as-etched films. The PL intensity increased with illumination time in air until a steady-state intensity was reached.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108772
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