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  • 1
    Electronic Resource
    Electronic Resource
    Low-power deposition of fluorinated microcrystalline silicon hydrogen alloy films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4024-4027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorinated microcrystalline silicon hydrogen alloy films have been prepared by the radio frequency glow-discharge decomposition of silicon tetrafluoride/hydrogen mixtures. Thereby, μc-Si:F:H films with high dark conductivity (∼10−3 Ω−1 cm−1), high photoconductivity (∼10−4 Ω−1 cm−1), showing crystalline structure in selected-area transmission electron microscope diffraction patterns as well as sharp infrared absorption and Raman shift spectra have been obtained under conditions of low-power density (∼0.15 W cm−2) and hydrogen dilution (∼20%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343432
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of ultraviolet irradiation on the white light degraded electronic properties of hydrogenated amorphous silicon films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1975-1977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of hydrogenated amorphous silicon (a-Si:H) thin films are known to undergo metastable light-induced changes that can be reversed by annealing at elevated temperatures. We have observed for the first time that annealing of the light-induced changes in the dark conductivity and photoconductivity of a-Si:H thin films can also be achieved by ultraviolet (UV) irradiation (wavelength ∼254 nm) of the films at room temperature. It has been shown that the bulk photoconductivity changes in spite of the fact that UV radiation is mostly absorbed near the top surface of the films. A simple explanation of the observed phenomena has been proposed involving a nonequilibrium distribution of phonons generated by absorption of high-energy photons in the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102137
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  • 3
    Electronic Resource
    Electronic Resource
    Reduction of the defect density in hydrogenated amorphous silicon by thermally energized growth precursors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3581-3583 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect density in plasma deposited hydrogenated amorphous silicon (a-Si:H) is known to be dependent on the thermal energy of growth precursors. The precursor temperature can be controlled independent of the substrate temperature by a mesh-type electrode placed close to the substrate. Energized precursors have a higher surface diffusion coefficient which results in a reduction of the steady-state defect density on the growth surface and hence in the film bulk. The optical band gap and hydrogen content depend only on the substrate temperature while the defect density is reduced drastically with increasing mesh temperature. Thereby, we have prepared a-Si:H having low defect density and wide optical band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111204
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of light soaking on the short-wavelength photoresponse in hydrogenated amorphous silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5896-5898 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectrum of the values of ημτ, the product of quantum efficiency, lifetime, and mobility of photogenerated carriers, has been obtained in the wavelength range 300–900 nm, before and after light soaking. It has been shown that in the annealed state, these values are nearly independent of wavelength as well as film thickness. The values of ημτ have been found to decrease more drastically in the short-wavelength region after light soaking, similarly to that observed after moisture adsorption. Changes in band bending are not likely to be the cause of the decrease in response as the dark conductivity does not change on light soaking. The implications of the result are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346938
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of deposition parameters on the properties of boron-doped amorphous silicon-carbide films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3917-3921 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optoelectronic properties of p-type a-Si1−xCx:H deposited by glow-discharge decomposition have been studied at different deposition temperatures and with varying methane concentration. The optical band gap is found to increase at lower temperatures and with higher methane concentrations. Infrared transmittance spectra reveal that the increase is due to carbon and/or hydrogen incorporation. Electron-spin-resonance spectra have been analyzed to show that the dangling bond density increases with carbon content. Low-temperature deposited films are found to posess a large (∼1018 cm−3) trapped hole density, indicating a broad valence band tail. It has been found that for a band gap of about 2 eV the optoelectronic properties are similar for low- and high-temperature deposited samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339209
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  • 6
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon carbide films deposited by low-power radio-frequency plasma decomposition of SiF4-CF4-H2 gas mixtures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3915-3923 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon carbide thin films have been deposited on amorphous substrates by radio-frequency plasma-assisted decomposition of tetrafluoro silane, tetrafluoro methane, and hydrogen gas mixtures using low-power density and deposition temperatures. The material is shown to possess the α-SiC structure using transmission electron microscopy. It has highly visible transmittance and exhibits bands due to silicon carbide as well as fluorine bonded to carbon and silicon in the infrared transmission spectra. It is easily doped, both types showing high conductivity (∼10 S/cm) and Hall mobility [∼10 cm2/(V s)] for either carrier type. The conductivity is seen to be independent of thickness down to ∼10 nm when deposited on glass. This behavior and the dependence of both structural and electronic properties on deposition parameters is discussed in terms of the chemical reactions in gas phase and on the growth surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348450
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  • 7
    Electronic Resource
    Electronic Resource
    Improvement of hydrogenated amorphous silicon germanium alloys using low power disilane–germane discharges without hydrogen dilution (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1274-1276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We suggest that the role of hydrogen dilution in the improvement of the quality of hydrogenated amorphous silicon germanium alloys is to alter the relative contribution of the short and long lifetime precursors to film growth which are deleterious and beneficient, respectively. In order to circumvent the preferential depletion of germane when mixed with silane, we have used low power disilane–germane discharges and thereby obtained films with an optical gap 〈1.5 eV having similar Urbach tail width and defect absorption, with and without hydrogen dilution. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114395
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  • 8
    Electronic Resource
    Electronic Resource
    Ultraviolet photon induced stimulation of surface reaction during growth of hydrogenated amorphous silicon: Estimation of the lifetime of film precursors (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2806-2808 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ultraviolet (UV) photons for the improvement of photoconductivity in hydrogenated amorphous silicon (a-Si:H) films has been investigated by intermittent deposition and UV laser irradiation procedures. It is found that UV photons stimulate precursor reaction on the growth surface effectively, and this results in improved photoelectronic properties of a-Si:H. Moreover, lifetime of precursors on the growth surface is estimated to be on the order of seconds under UV photon irradiation at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110319
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  • 9
    Electronic Resource
    Electronic Resource
    Dependence of steady-state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1791-1793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8×1021 to 2.4×1023 cm−3 s−1, while the illumination temperature was kept at 30 or 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109551
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  • 10
    Electronic Resource
    Electronic Resource
    Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soaking (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1817-1819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of saturation of the defect density and of the photoconductivity in hydrogenated amorphous silicon after light soaking with laser pulses. The saturated defect density reaches approximately the same value as the density established by soaking with continuous light. Comparison of pulsed with cw light-soaking experiments, via an effective light-soaking time, shows the use of pulsed light to be equivalent to that of continuous wave light, in defect saturation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108384
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