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  • 1
    Electronic Resource
    Electronic Resource
    A comprehensive defect model for amorphous silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2857-2872 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density and distribution of dangling-bond defects in a given sample of hydrogenated amorphous silicon (a-Si:H) depends on thermal history and on electron and hole densities. As a consequence, the defect density of a-Si:H devices changes during their operation. Optoelectronic device modeling therefore must be coupled with the modeling of the density and distribution of dangling-bond defects. In this paper such a defect model is presented. The model accounts for the effects of the temperature of film growth, the rate of film growth, the film thickness, light-soaking intensity, time, and temperature, and the temperature and duration of thermal annealing. The model is based on the assumption of a limited pool of defects with a Gaussian distribution of thermal annealing energies. This is the most simple model that agrees reasonably well with a variety of experimental data. The applicability of the model is demonstrated on many examples drawn from measurements of dark and photoconductivity, transmission spectroscopy, and subgap optical absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351539
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  • 2
    Electronic Resource
    Electronic Resource
    Spectroscopic diagnostics of plasma-chemical-vapor deposition from silane and germane (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3055-3060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Coherent anti-Stokes Raman spectroscopy (CARS), laser-induced fluorescence (LIF), and emission spectroscopy are employed for the diagnostics of radio-frequency discharge plasmas of silane and germane; CARS signal of germane molecule; and LIF signal and ultraviolet emission signal of germanium atom in discharges, as well as signals from nongermanium-related neutral species are measured. The effect of hydrogen dilution on emission signal intensities in the steady-state discharge explains dynamic behaviors of the emission and CARS signal intensities in the closed discharge; these spectroscopic techniques are powerful diagnostic tools for gas-phase processes using mixed gas sources.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337857
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  • 3
    Electronic Resource
    Electronic Resource
    Silane thermometry in radio-frequency discharge plasma by coherent anti-Stokes Raman spectroscopy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1872-1874 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rotational temperature of silane molecules in a flowing gas as well as in a radio-frequency discharge plasma of silane has been determined by the analysis of its coherent anti-Stokes Raman spectra. The ν1 Q-band coherent anti-Stokes Raman spectra of silane have been measured under different conditions such as discharge off, discharge on, and electrode heating, and fitted to theoretically calculated curves for various rotational temperatures using a nonlinear least-squares method. The results have shown that discharge power as well as electrode heating increase the rotational temperature of SiH4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336415
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  • 4
    Electronic Resource
    Electronic Resource
    Stable hydrogenated amorphous silicon films deposited from silane and dichlorosilane by radio frequency plasma chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 965-967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films have been grown by radio frequency (rf) plasma chemical vapor deposition with the addition of small amounts (up to 20%) of dichlorosilane to the silane. Results show that as the amount of dichlorosilane is increased, the films are more resilient to the creation of light induced defects. Under intense pulsed laser illumination (5 mJ/pulse, 10 ns, 10 Hz) the steady state defect density measured by the constant photocurrent method (CPM) is reduced by over one order of magnitude to 4×1016 cm−3 as compared to ∼5×1017 cm−3 for films grown under identical conditions with pure silane. Furthermore, there is a threefold increase in the deposition rate over the range of mixture ratios studied here. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113612
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of steady-state defect density in hydrogenated amorphous silicon on carrier generation rate studied over a wide range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1791-1793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8×1021 to 2.4×1023 cm−3 s−1, while the illumination temperature was kept at 30 or 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109551
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  • 6
    Electronic Resource
    Electronic Resource
    Saturation of the defect density in hydrogenated amorphous silicon by pulsed light soaking (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1817-1819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of saturation of the defect density and of the photoconductivity in hydrogenated amorphous silicon after light soaking with laser pulses. The saturated defect density reaches approximately the same value as the density established by soaking with continuous light. Comparison of pulsed with cw light-soaking experiments, via an effective light-soaking time, shows the use of pulsed light to be equivalent to that of continuous wave light, in defect saturation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108384
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  • 7
    Electronic Resource
    Electronic Resource
    Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2380-2382 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an ultrahigh vacuum plasma-enhanced chemical-vapor deposition system, and deposited high-purity device-quality hydrogenated amorphous silicon films. High sensitivity secondary ion mass spectrometry measurements show that impurity contents in the bulk of the present films are reduced to 2×1015 cm−3 for O, 7–10×1015 cm−3 for C, and 5×1014 cm−3 for N; these impurities are normally present at fairly high levels. Nevertheless, extensive light soaking of the films resulted in a defect density as high as 5×1017 cm−3, which is well above the impurity content. This result excludes those models of photoinduced degradation that postulate one-to-one correlation between light-induced defects and O, C, or N impurity atoms. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116140
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