Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 499-503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Nd3+ in CaF2 layers grown on Si and GaAs substrates by molecular beam epitaxy is studied by photoluminescence spectroscopy. The results are in qualitative agreement with those obtained on CaF2:Nd homoepitaxial layers. A lower emission intensity (∼70%) at λ=1.0475 μm is attributed to residual stress and crystalline defects. Concentration quenching of photoluminescence appears at concentrations higher than 3.6 wt % Nd. The use of (Ca,Sr)F2 for lattice matching to GaAs leads to a significant inhomogeneous broadening of Nd3+ emissions due to disorder in the cationic sublattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351880
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Hetero- and homoepitaxial Nd3+-doped LaF3 thin films grown by molecular beam epitaxy: A spectroscopic study (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3699-3704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hetero- and homoepitaxial Nd3+-doped LaF3 thin films have been grown by molecular beam epitaxy. Two different orientations of CaF2 substrates, (111) and (110), have been used for the heteroepitaxial structures. High-resolution emission and excitation spectra as well as the decay time of the emission have been measured. The spectroscopic measurements demonstrate that one Nd3+ site is present in the LaF3 layers grown on CaF2(111) substrates but two slightly different Nd3+ centers are resolved in the films on CaF2(110) substrates. One Nd3+ site has been found in the homoepitaxial sample. Slight differences are observed between the centers found in the LaF3 layers and the one observed in the Nd3+-doped LaF3 bulk crystal. For the homoepitaxial layer, the linewidths are similar to those of the bulk crystals, whereas for the heteroepitaxial layers, a broadening is observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371281
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Erratum: Raman scattering study of [hhk]-GaAs/[Si or CaF(2)] strained heterostructures [J. Appl. Phys. 76, 2773 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2849-2849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359612
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering study of [hhk]-GaAs/(Si or CaF2) strained heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2773-2780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to measure the frequency shift, symmetry, and activity of long-wavelength optical phonons in several GaAs strained epilayers. The results are compared with theoretical evaluations using the elastic compliances, phonon deformation potentials, and Raman tensors. The effect of growth direction ([001], [111], and [112]) and the substrate nature (Si or CaF2) is analyzed. The importance of nonstandard growth directions, [111] or [112], on residual stress and piezoelectric effect is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357542
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    1.54 μm wavelength emission of highly Er-doped CaF2 layers grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 270-273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaF2:Er layers have been grown by molecular-beam epitaxy on (100)-oriented CaF2 substrates; the Er concentration ranges from 1% to 50% (mole fraction). The 1.54 μm emission observed under excitation around 800 nm was studied by photoluminescence. Up to 35% Er concentration the integrated emission increases monotonously, quenching appearing for higher doping levels. Photoluminescence results are discussed within the framework of previous studies of Er3+ emission in the near-infrared range (830–860 nm) in order to gain insight into the Er centers involved in the 1.54 μm emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357140
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Strain relaxation in [001]- and [111]-GaAs/CaF2 analyzed by Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1126-1132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Study is devoted to a complete characterization of GaAs/CaSrF2/CaF2 heterostructures. Due to the transparency of CaF2 substrate to visible light, Raman spectra have been obtained at both interface and surface sides of the 2 μm GaAs layer. Moreover, penetration depth of light varying with wavelength allows one to perform a tomography of this layer. The crystalline quality at the vicinity of the surface is analyzed through Raman selection rules for both [001] and [111] growth directions. In the latter case, a stress profile has been realized in order to determine its relaxation into the GaAs layer: It occurs in the first 40 nm from the interface. Finally, this methodology is applied to optimize growth conditions in order to obtain stable highly strained systems. By comparison with photoluminescence data, the Raman probe is shown to be very efficient for this purpose. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358975
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Effect of growth temperature and doping concentration on the distribution of the emitting centers in CaF2:Er molecular beam epitaxial layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2749-2752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of Er-doped CaF2 layers on (100)oriented CaF2 substrates was performed using CaF2 and ErF3 evaporation cells. The effect of growth temperature and Er concentration on the distribution of the different emission centers observed in these epitaxial Er-doped layers was investigated. Photoluminescence analyses were performed in the 830–860 nm wavelength range in which the 4S3/2→4I13/2 transitions of the Er3+ ions take place. The evolution of the relative emission intensity between single and aggregate Er3+ centers as a function of growth temperature shows that the emission from isolated Er3+ ions is favored in a growth temperature range of 500–520 °C. Emission lines from complex Er3+ centers are found to rise relative to those of isolated sites as Er concentration increases. Finally, no quenching of the integrated luminescence intensity occurs in the concentration range investigated, 0.05–6 mol % (0.1–16 wt%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356211
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Er–Yb codoped CaF2 thin films grown by molecular beam epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 679-684 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yb:Er: codoped CaF2 monocrystalline films have been grown by molecular beam epitaxy (MBE) using YbF3, ErF3, and CaF2 evaporation on CaF2 substrates. Luminescence and excitation of luminescence at 25 K are measured in order to investigate the role of Yb3+ codoping and the effect of the growth conditions during the MBE process on the incorporation of active rare-earth species in CaF2. It is found, from a comparison with earlier work on singly doped thin films, that the energies of the levels of Er3+ ions are not modified by the double doping, whereas mixed complex centers are formed. Growth conditions are found to be important controlling factors for the incorporation of Yb3+ as a sensitizer, and, consequently, for the transfer efficiency. From excitation and absorption spectra it is shown that the lowest component of the Er:4I11/2 manifold has an energy higher than that of Yb:2F5/2 and the consequences are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364230
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Er3+ doping of CaF2 layers grown by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 5 wt % is demonstrated on CaF2 substrates. Separated effusion cells containing CaF2 and ErF3 were used. The photoluminescence spectra of the samples show emissions from centers of different symmetry identified by reference to published results obtained on CaF2:Er3+ bulk crystals. No influence of the substrate orientation—(100) or (111)—on the luminescence characteristics was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109263
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    CaF2:Er3+ molecular beam epitaxial layers as optical waveguides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3242-3244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaF2:Er thin films grown by molecular beam epitaxy on CaF2 substrates have been characterized as optical waveguides. The characterization has been carried out by measuring the synchronous angles in attenuated total reflection experiments. It has been found that the incorporation of Er3+ ions to the CaF2 crystal produces an increase of the refractive index of the material giving rise to the formation of a steplike planar optical waveguide. The refractive index increase shows a linear dependence with Er3+ concentration up to 35 mol %, at which point saturation is observed. The obtained results compared well with previously reported data on the lattice parameter of CaF2:Er3+ bulk crystals and fluorescence quenching from Er3+ ions in these layers. The results of this work show that the preparation of CaF2:Er3+ layers on CaF2 substrates by molecular beam epitaxy is an ideal method to produce monomode active optical waveguides useful for optoelectronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116561
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...