Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
81 (2002), S. 871-873
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown (LT) GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term performance of the modified emitters is improved by the LT GaAs surface layer. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1497192
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