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  • 1
    Electronic Resource
    Electronic Resource
    Scalable high-power optically pumped GaAs laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of disk geometry, optically pumped semiconductor gain elements for high-power scalability and good transverse mode quality has been studied. A room-temperature TEM00 transverse mode, external-cavity GaAs disk laser has been demonstrated with 500 W peak-power output and 40% slope efficiency, when pumped by a Ti:Al2O3 laser. The conditions for diode laser pumping are shown to be consistent with available power level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105034
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    High-brightness diode-laser-pumped semiconductor heterostructure lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1280-1282 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel, generic design for diode-pumped lasers and amplifiers utilizing semiconductor heterostructures has been implemented in the InGaAs/GaAs/AlGaAs material system. The spatial and spectral characteristics of these heterostructures are optimized to provide low output beam divergence, low aspect ratio, high efficiency, and low threshold. A pump-power-limited cw output of 0.58 W was obtained with diode-array pumping, and a peak power of 33 W per facet was achieved with pulsed Ti:Al2 O3 laser pumping. A near-diffraction-limited output beam with a divergence of 14° by 3.4° has been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107316
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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