ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, the electrical properties of Pt/GaN Schottky contacts were studied. Thetemperature dependence of the barrier height and ideality factor, and the low experimental value ofthe Richardson’s constant, were discussed considering the formation of an inhomogenous Schottkybarrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductiveatomic force microscope, demonstrated a Gaussian distribution of the local barrier height values andallowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminatingon the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1341.pdf
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