ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The current-voltage characteristics of Al+ implanted 4H-SiC p+n junctions show animportant reduction of leakage currents with diode aging at room temperature. The case of a family ofdiodes that immediately after manufacture had forward current density increasing from 10-9 to10-6 A/cm2 when biased from 0 and 2 V, and had a reverse leakage current density of @ 5×10-7 A/cm2when biased at 100 V, is here presented and discussed. During diode manufacturing a postimplantation annealing at 1600 °C for 30 min was followed by a 1000 °C 1 min treatment for metalcontacts alloying. After 700 days of storage at room temperature, the diode reverse current densityreached an asymptotical value of @ 4×10-11 A/cm2 that is four order of magnitude lower than theinitial one. A 430 °C annealing that was made after 366 days is responsible of a decrease of one ofthese four orders of magnitude, but it does not interrupt the decreasing trend versus increasing time.This same annealing has been effective also for minimizing forward current for bias 〈 2 V, andsticking the diode turn-on voltage on 1.4 V and the current trend on an ideality factor of 2. Theseresults show that in Al+ implanted 4H-SiC p+n junction there are defects that have an annihilationdynamic at very low temperatures, i.e. room temperature and 430 °C
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1027.pdf
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