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  • 1
    Electronic Resource
    Electronic Resource
    Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 108-109 (Dec. 2005), p. 315-320 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Radiation hardness of silicon detectors based on thin epitaxial layer for the LHC upgrade was studied. No type inversion was observed after irradiation by 24 GeV protons in the fluence range (1.5–10)⋅1015 cm–2 due to overcompensating donor generation. After long-term annealing highly irradiated devices show decrease of effective doping concentration and then undergo type inversion. All mentioned means that thin epitaxial devices might be used for innermost layers of vertex detectors and need moderate cooling during beam off time. Properly chosen scenario might help to restore their working characteristics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.315.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Minimum Ionizing Particle Detector Based on p〈sup〉+〈/sup〉n Junction SiC Diode (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1469-1472 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this work ion-implanted p+/n diodes have been used as minimum ionizing particle(MIP) detectors. The diode structure is based on a 0.45 $m deep, NA = 4×1019 cm-3 doped p+ anode,ion implanted in an n-type epilayer with thickness equal to 55 $m and nominal donor doping ND= 2×1014 cm-3. The diode breakdown voltages were above 1000V. At 1000V reverse bias the diodeleakage current was of the order of 1 nA. The punch through depletion voltage was nearing therange 220-250 V. The charge collection efficiency to minimum ionizing particle was investigated bya 90Sr β source. The pulse height spectrum was measured as a function of the reverse voltage in therange 0-605 V. At each bias point the signal was stable and reproducible, showing the absence ofpolarization effects. At 220 V the collected charge was 2970 e- and saturated at 3150 e- near 350 V.At the moment, this is the highest collected charge for SiC detectors. At bias voltages over 100Vthe spectrum was found to consist of two peaks clearly separated. Around 250 V the signalsaturates, in agreement with CV results
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1469.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Thermally stimulated current spectroscopy: Experimental techniques for the investigation of silicon detectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 932-936 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Radiation damage of silicon detectors can be investigated by means of several techniques. In a high-luminosity environment the thermally stimulated current (TSC) spectroscopy proves to be a good experimental method in order to analyze the deep defects induced by irradiation. Two different experimental systems for TSC spectroscopy, developed at the Energy Engineering Department of Florence, are examined in detail. The two systems differ in the cryogenic agent used to cool the silicon detectors: the first one utilizes a helium-gas closed-cycle Gifford–McMahon two-stage cryogenerator; the second one utilizes the helium vapors present inside a liquid helium Dewar. In the two systems two different heating procedures are used in order to perform the thermal scans necessary to carry on the TSC measurements: in the former system an electric heater performs the thermal scan, while in the latter one the heating process is achieved utilizing the temperature variation of the helium vapors inside the Dewar as a function of the height over the surface of the boiling helium. The main advantage of the electric heater is the possibility of obtaining heating rates β as high as 2.0 K/s, while the helium vapors ensure an excellent temperature matching between the temperature sensor and the sample (with the drawback of lower heating rates). The two methods used to get information by means of TSC spectroscopy, (variation of β and delayed heating) are briefly described together with an evaluation of the sensitivity of the measurement (no difference has been made between the two systems because the use of a different cryogenic agent does not affect sensitivity). Both systems proved satisfactory, even if the ease of operation of the helium gas makes it preferable in the temperature range examined by our measurements (120–200 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144145
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  • 4
    Electronic Resource
    Electronic Resource
    Deep levels and trapping mechanisms in chemical vapor deposited diamond (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5765-5774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300–650 K. Two previously unknown defects have been identified, characterized by activation energies E1=1.14 eV and E2=1.23 eV, cross sections of about σ(approximate)10−13 cm2 and concentrations of Nt(approximate)1016 cm−3. They have been clearly observed by PICTS and isolated in TSC measurements by use of a fractional annealing cycle in the temperature range 300–400 K. Due to their trap parameters, in particular the high cross section, the levels corresponding to E1 and E2 are characterized by capture times of the order of 10–100 ps. A dominant TSC peak observed at (approximate)500 K has been also investigated and has been resolved into four components with activation energies of the order of 1 eV and cross sections in the range 10−19–10−17 cm2. Three of these levels exhibit a fast capture rate (0.1–10 ns) in spite of their small cross sections, due to their high concentration in the investigated sample. Correlating our results with room temperature charge collection studies, we propose that the observed traps with their fast capture rates can be effective in limiting the carrier lifetimes and, consequently, the charge collection efficiency of CVD diamond particle detectors © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461891
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  • 5
    Electronic Resource
    Electronic Resource
    Improvement of the dosimetric properties of chemical-vapor-deposited diamond films by neutron irradiation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 298-300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of chemical-vapor-deposited (CVD) diamond films as on-line dosimeters has been substantially improved after irradiation with fast neutrons up to a fluence of 5×1014 n/cm2. This is correlated to a decrease of more than one order of magnitude in the concentration of deep levels with activation energy in the range 0.9–1.4 eV, as observed by thermally stimulated current and photoinduced current transient spectroscopy. As a consequence, a fast and reproducible dynamic response is observed during irradiation with a 6 MV photon beam from linear accelerator and with a Co60 source. A quasilinear dependence of the current on the dose rate is obtained in the range of interest for clinical applications (0.1–10 Gy/min). The resulting sensitivity is definitely higher than that of standard ionization chambers, and compares favorably with those of standard silicon dosimeters and of best-quality natural and CVD diamond devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491014
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  • 6
    Electronic Resource
    Electronic Resource
    Measurements of Charge Collection Efficiency of p〈sup〉+〈/sup〉/n Junction SiC Detectors (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 483-485 (May 2005), p. 1021-1024 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments [1]. In this work p+/n SiC diodes realized on a medium doped (1×1015 cm [removed info]-3), 40 µm thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. Preliminary results till 900 V reverse voltage show a good collection efficiency of 1700 e- and a collection length (ratio between collected charges and generated e-h pairs/µm) equal to the estimated width of the depleted region
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.1021.pdf
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