ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Aiming to minimize the interface state density, we fabricated MOS capacitors on n-type4H-SiC by using wet oxidation of nitrogen implanted layers. We investigated a wide range ofimplantation dose, including a high dose able to amorphise a surface SiC layer with the intent toreduce the oxidation time. The oxide quality and the SiO2-SiC interface properties werecharacterized by capacitance-voltage measurements of the MOS capacitors. The proposed process,in which nitrogen is ion-implanted on SiC layer before a wet oxidation, is effective to reduce thedensity of interface states near the conduction band edge if a high concentration of nitrogen isintroduced at the SiO2-SiC interface. We found that only the nitrogen implanted at the oxide-SiCinterface reduces the interface states and we did not observe the generation of fixed positive chargesin the oxide as a consequence of nitrogen implantation. Furthermore, the concentration of the slowtraps evaluated from the Slow Trap Profiling technique was low and did not depend on the nitrogenimplantation fluence
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.639.pdf
