ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+anodes made by Al+ ion implantation at 400°C and post-implantation annealing in silane ambient ina cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of6×1019 cm-3 and a depth of 160 nm. Implant anneals were performed in the temperature range from1600°C to 1700°C. As the annealing temperature was increased, the silane flow rate was alsoincreased. This annealing process yields a smooth surface with a roughness of the implanted area of1.7 - 5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measuredat room temperature, decreased for increasing annealing temperatures with a minimum value of 1.40-cm measured for the sample annealed at 1700°C. Considering only the current-voltagecharacteristic of a diode that could be modeled as an abrupt p/n junction within the frame of theShockley theory, the diode process yield and the diode leakage current decreased, respectively, from93% to 47% and from 2×10-7 Acm-2 to 1×10-8 Acm-2 at 100 V reverse bias, for increasing postimplantation annealing temperature
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.819.pdf
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