ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVDreactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth ratesup to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growthtime. The structural quality of the films was determined by X-ray diffraction. A 65 μm thickepitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology withoccasional carrot-like and triangular defects. The film proved to be of high structural quality withan X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.187.pdf
Permalink