ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work we report the most recent high-temperature long-term reliability results ofthe 600 V/14 A, 4H-SiC vertical-channel junction field-effect transistors (VJFETs). Two groups (Aand B) devices were subjected to different thermal and electrical stresses. One device (Group A)reached 12,000 hours of continuous switching without a single failure. Four devices in Group Awere thermally stressed at 250 °C over 4,670 hours in air, for which standard deviation of thespecific on-resistance (RONSP) in linear region at gate bias (VGS) of 3 V were 〈 4.1% throughout theentire duration time. The off-state characteristics were evaluated by high temperature reverse bias(HTRB) tests. Three devices (Group A) were biased at 50% rated BVDS at 250 °C for 2,278 hours.A higher reverse bias at 80 % rated BVDS was then applied to 14 devices (group B) at 200 °C for1,000 hours. Variations of the leakage current were negligible throughout the entire HTRB test forall tested devices
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1051.pdf
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