ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The performance and characterization of SiC JFETs and BJTs, used as inverter switchingdevices, in a 2 kW, high temperature, 33 kHz, 270-28 V DC-DC converter has been accomplished.SiC and Si power devices were characterized in a phase shifted H-bridge converter topologyutilizing novel high temperature powdered ferrite transformer material, high temperature ceramicfilter capacitors, SiC rectifiers, and 10 oz. 220oC polyimide printed circuit boards. The SiC deviceswere observed to provide excellent static and dynamic characteristics at temperatures up to 300oC.SiC JFETs were seen to exhibit on-resistance trends consistent with temperature-mobility kineticsand temperature invariant dynamic loss characteristics. SiC BJTs exhibited positive temperaturecoefficients (TCE) of VCE and negative β TCEs, with only a 2-fold increase in on-resistance at300oC. Both SiC power devices possessed fast inductive switching characteristics with τon and τoff~100-150 ns when driving the transformer load. The SiC converter characteristics were comparedto Si-MOSFET H-bridge operation, over its functional temperature range (30-230oC), and highlightsthe superiority of SiC device technology for extreme environment power applications
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.991.pdf
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