ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Post-oxidation anneals that introduce nitrogen at the SiO2/4H-SiC interface have beenmost effective in reducing the large interface trap density near the 4H-SiC conduction band-edgefor (0001) Si face 4H-SiC. Herein, we report the effect of nitridation on interfaces created on the(11 20) a-face and the (0001) C-face of 4H-SiC. Significant reductions in trap density (from 〉1013cm-2 eV-1 to ~ 1012 cm-2 eV-1 at EC-E ~0.1 eV) were observed for these different interfaces,indicating the presence of substantial nitrogen susceptible defects for all crystal faces. Annealingnitridated interfaces in hydrogen results in a further reduction of trap density (from ~1012 cm-2 eV-1to ~5 x 1011 cm-2 eV-1 at EC-E ~0.1 eV). Using sequential anneals in NO and H2, maximum fieldeffect mobilities of ~55 cm-2 V-1s-1 and ~100 cm-2 V-1s-1 have been obtained for lateral MOSFETsfabricated on the (0001) and (11 20) faces, respectively. These electronic measurements have beencorrelated to the interface chemical composition
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.949.pdf
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