ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Composite ohmic contacts designed for SiC devices operating in air at 350°C havebeen studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion andoxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture ofAr and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-Si-N barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion ofAu. The electrical and mechanical characteristics of the composite contacts were stable afterhundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on thespecific contact resistance and the semiconductor sheet resistance, and the results of wirebond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2dielectric layers and the ohmic contact layers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.879.pdf
