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  • 1
    Electronic Resource
    Electronic Resource
    Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 895-898 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC aredescribed. Room and elevated temperature results are presented. Elevated temperaturemeasurements of specific contact resistance are compared to theoretical calculations. Thecalculations require the acceptor doping concentration and the contact’s barrier height.Epitaxial material has a known acceptor value thereby allowing the barrier height to bededuced by requiring agreement between the calculated and measured values of the contactresistance. Calculations of the contact resistance for implanted material use the barrier heightfrom the epitaxial results along with a variable activated acceptor doping concentration whichis adjusted to give agreement with measured room temperature specific contact resistances.Specific contact resistances as low as 7x10-6 ohm-cm2 fabricated on the Si face have beenobtained to epitaxial 4H p-type material whereas contacts to implanted material result inmuch larger contact resistance values of 4x10-5 ohm-cm2. These results, when compared totheoretical calculations, indicate that activated acceptor doping concentrations in heavilyimplanted material are on the order of 2% of the implant concentration
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.895.pdf
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Composite Ohmic Contacts to SiC (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 879-882 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Composite ohmic contacts designed for SiC devices operating in air at 350°C havebeen studied. Ohmic contacts to n- and p-4H-SiC were protected against inter-diffusion andoxidation by Ta-Si-N layers obtained by sputter deposition from a TaSi2 target in a mixture ofAr and N2. Platinum was sputter-deposited at 250°C to promote adhesion between the Ta-Si-N barrier layer and a thick Au cap layer. Platinum also acts as a barrier to the diffusion ofAu. The electrical and mechanical characteristics of the composite contacts were stable afterhundreds of hours of annealing in air at 350°C. We report the effects of thermal aging on thespecific contact resistance and the semiconductor sheet resistance, and the results of wirebond pull and shear tests following aging for Ta-Si-N / Pt / Au stacks deposited on both SiO2dielectric layers and the ohmic contact layers
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.879.pdf
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 883-886 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Tantalum-ruthenium diffusion barriers for contacts to SiC were investigated in this work.Stable specific contact resistances of (2 ± 1) x 10-5 Ω cm2 and (4 ± 2) x 10-5 Ω cm2 were measuredon p-type 4H SiC for Al/Ni and Ni ohmic contacts, respectively, when they were beneath Ru-richTa-Ru barriers aged at 350 °C for 3000 h in air. Annealed Ni ohmic contacts on n-SiC aged at350 °C in air for 1000 h (the longest time tested) are also very stable. Pull tests revealed greatlyimproved adhesion between layers in metallization stacks that contained Ta-Ru barriers in place ofpreviously studied Ta-Ru-N barriers. A 5 nm Ta layer inserted between the Ru-rich Ta-Ru barriersand Au was found to further improve the adhesion of the metallization stacks
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.883.pdf
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    Paper (German National Licenses)
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