ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Nickel ohmic contacts to p-type epitaxial and heavily implanted 4H-SiC aredescribed. Room and elevated temperature results are presented. Elevated temperaturemeasurements of specific contact resistance are compared to theoretical calculations. Thecalculations require the acceptor doping concentration and the contact’s barrier height.Epitaxial material has a known acceptor value thereby allowing the barrier height to bededuced by requiring agreement between the calculated and measured values of the contactresistance. Calculations of the contact resistance for implanted material use the barrier heightfrom the epitaxial results along with a variable activated acceptor doping concentration whichis adjusted to give agreement with measured room temperature specific contact resistances.Specific contact resistances as low as 7x10-6 ohm-cm2 fabricated on the Si face have beenobtained to epitaxial 4H p-type material whereas contacts to implanted material result inmuch larger contact resistance values of 4x10-5 ohm-cm2. These results, when compared totheoretical calculations, indicate that activated acceptor doping concentrations in heavilyimplanted material are on the order of 2% of the implant concentration
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.895.pdf
