ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this paper, we review the state of the art of SiC switches and the technical issues whichremain. Specifically, we will review the progress and remaining challenges associated with SiCpower MOSFETs and BJTs. The most difficult issue when fabricating MOSFETs has been anexcessive variation in threshold voltage from batch to batch. This difficulty arises due to the fact thatthe threshold voltage is determined by the difference between two large numbers, namely, a largefixed oxide charge and a large negative charge in the interface traps. There may also be somesignificant charge captured in the bulk traps in SiC and SiO2. The effect of recombination-inducedstacking faults (SFs) on majority carrier mobility has been confirmed with 10 kV Merged PNSchottky (MPS) diodes and MOSFETs. The same SFs have been found to be responsible fordegradation of BJTs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.895.pdf
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