ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The atomic structure of the 4H-SiC(11 2 0) surface including possible phasetransformations via Si deposition and annealing has been investigated using low energy electrondiffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS)and atomic force microscopy (AFM). The sample is initially prepared by hydrogen etching beforeloading into the ultra-high vacuum system. The sample is then out-gassed to remove oxygen fromthe surface. To explore the existence of ordered surface phases, Si is deposited on the sample at850°C for 15 minutes followed by a series of sequential annealing steps. Throughout this process,the surface is monitored by LEED, AES and XPS. LEED shows that the surface continuouslymaintains a (1×1) periodicity. Yet, two unique and distinguishable (1×1) phases can be identified.The changes between these phases are clearly demonstrated by the LEED spot intensities.Simultaneously, the Auger and XPS data show a decrease in Si intensity
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.673.pdf
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