ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Optoelectronic devices with 1D modulation of the potential through hetero-structure ordoping superlattices have so far been the privilege of III-V semiconductors. Based on the fact thatSiC can be grown monolayer by monolayer, and that Si–Si and C–C double layers have been observedin it, we suggest the possibility of a stress-free polarization superlattice, consisting of theperiodic variation of Si-face and C-face domains along the hexagonal axis of 4H-SiC. Such a structurecould, in principle, be grown by molecular source atomic layer epitaxy. Investigating suchsuperlattices by density functional theory, using a hybrid functional, we show that Si–Si and C–Cdouble layers at the antiphase boundaries confine electrons within ~0.5 nm, and the periodic polarizationfield causes zig-zag shaped band edges which gives rise to tunable absorption, to spatialseparation of free electrons and holes, as well as to optical nonlinearity. These properties couldallow the application of SiC also in optoelectronics and photonics
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.355.pdf
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