ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The dependencies of nitrogen incorporation on nitrogen flow rate, Si/C ratio, growth rate, and temperature were investigated. It was established that the efficiency of nitrogen incorporation for the C-face growth at 1300 °C is higher than that for the Si-face for a wide range of the growth conditions. Seeming deviation of the Si/C ratio dependence from the “site-competition” trend confirmed the critical role of the silicon vapor condensation during the low-temperature epitaxy. Opposite trends for the nitrogen doping dependence on the growth rate were observed on the Si- and C-faces. Finally, a complex temperature dependence of the nitrogen doping in the temperature range from 1300 to 1450 0C was observed
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.159.pdf
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