ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Previously reported CVD epitaxial growth of 4H-SiC at temperatures down to and below13000C using CH3Cl precursor offered a promise of new device applications that could benefit fromlower-temperature growth process. In this work, selective epitaxial growth (SEG) of 4H-SiC mesasusing conventional SiO2 low temperature mask is reported. Virtually no nucleation on the maskcould be observed after SEG at 13000C. The mask could be easily removed after the growth, withno degradation of the surface of SiC substrate under the mask. For the growth conditions thatnormally resulted in growth rate of 2 /m/hr and defect-free epilayer morphology during regularfull-wafer (non-SEG) epitaxy, the epilayer morphology during SEG was significantly degraded bythe appearance of oriented triangular defects, while the growth rate increased more than three timesin comparison to the blanket epitaxial growth due to the loading effect. The growth at optimizedgrowth conditions and lower growth rate resulted in significant reduction of the surface defects,making this approach promising for obtaining device-quality mesas. The crystal quality of themesas, defects at the mesa walls, formation of facets during SEG, and other effects are reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.149.pdf
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