ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Growth rates from 10 to 38 μm/h of single crystal 3C-SiC on planar Si (001) substrateshave been obtained in a low-pressure horizontal hot-wall CVD reactor. The propane-silanehydrogengas chemistry system with HCl added as a growth additive, which allows an increasedamount of silane to be introduced into the reactor during growth, was used. The 3C-SiC film growthrate versus silane mole fraction was found to be a linear function in the range from 0.43x10-3 to1.50x10-3. Nomarski optical microscopy, scanning electron microscopy, Fourier transform infraredspectroscopy, atomic force microscopy and X-ray diffraction were used to characterize thedeposited layers. The X-ray rocking curve taken on the (002) diffraction plane of a 12 μm thick 3CSiC(001) layer displayed a FWHM of 360 arcsec, which indicates the films are mono-crystalline
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.191.pdf
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