ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Previous Electron Paramagnetic Resonance (EPR) studies identified the carbon danglingbond center as the main paramagnetic interface defect in 3C, 4H, 6H-SiC/SiO2. We demonstratethat this defect, called PbC center, can be passivated by forming gas annealing at 400°C. We havemeasured the PbC density at annealed 4H- and 3C-SiC/SiO2 interfaces and attributed its reduction tothe transformation of the dangling bonds into EPR inactive C-H bonds. We have also studied thereverse phenomenon occurring during vacuum annealing at temperatures ranging from 600°C up to1000°C and have determined a dissociation energy of ≈4.3 eV for the 3C and 4H polytypes
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1015.pdf
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