ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report investigations on the fabrication and electrical characterization in the range 27°C-290 °C of normally off 4H-SiC circular MOSFET devices manufactured on p-type semiconductor.An high quality SiO2/SiC interface is obtained by nitrogen ion implantation conducted before thethermal oxidation of SiC. Two samples with different nitrogen concentration at the SiO2/SiC interfaceand one un-implanted have been manufactured. The sample with the highest N concentration at theinterface presents the highest channel mobility and the lowest threshold voltage. With increasingtemperature, in all the samples the threshold voltage decreases and the electron channel mobilityincreases, reaching the maximum value of about 40 cm2/Vs at 290 °C for the sample with the highestN concentration. The observed improvement of the mobility is related to the beneficial effect of the Npresence at the SiO2/SiC interface, which leads to the reduction of the interface trap density withenergy close to the conduction band. Our results demonstrate that N implantation can effectively beused to improve the electrical performance of surface n-channel 4H-SiC MOSFETs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.699.pdf
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