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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8225-8227 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Insulating diamond films were imaged by scanning tunneling microscopy (STM) utilizing photoinduced bulk carrier transport to establish tunneling currents. General comparisons of topographic STM images and atomic force microscopy images acquired on the same sample demonstrate that submicrometer structures obtained in the images can be correlated. This observation establishes that the topography of an insulating surface such as diamond can be imaged under illumination by STM. The results suggest that local electronic structure of illuminated insulating surfaces can be probed using scanning tunneling spectroscopy.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 6739-6749 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We describe high resolution electron energy loss (HREELS) and UV-photoemission (UPS) measurements performed to investigate the vibrational and electronic surface and interfacial properties of thin insulating polymer films. The measurements were performed in ultrahigh vacuum on PMDA–ODA films of thicknesses ∼30–50 and ∼1000 A(ring) which were spun onto silicon or onto metallic substrates and on thin PMMA films deposited on metallic substrates. The general characteristics of our HREELS spectra are weak, diffuse electron scattering and broad vibrational bands which we have assigned by comparison to infrared absorption data. Cooling the polymer films which were spun onto Si substrates to ∼100 K resulted in a uniform reduction of the overall spectral broadening. This additional inelastic scattering contributing to the broadening appears to originate at the PMDA–ODA/Si interface.
    Type of Medium: Electronic Resource
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