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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1210-1212 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Vacuum arc ion sources provide a convenient tool for the production of intense beams of metal ions. The sources are relatively easy to construct and they can produce beams from all of the solid metals as well as from compounds, alloys, and mixtures. We have made a number of different kinds of such sources over the course of our development work at LBL in the past decade, from very small "thumb-size'' versions to a very large one with a 50 cm diameter extractor. Beam current ranges from a few milliamperes up to almost 10 A and extraction voltage from about 1 to 100 kV. Multicathode versions have been made so that one can switch between metal ion species simply and quickly. Most of the sources have been operated in a repetitively pulsed mode, and we've also tested a dc version. Here we outline some construction features of the array of vacuum arc ion sources that we've developed and used, and describe their performance and limitations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3389-3393 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple and economical microwave plasma-assisted chemical vapor deposition facility has been developed and used for synthesis of diamond thin films. The system is similar to those developed by others but includes several unique features that make it particularly economical and safe, yet capable of producing high quality diamond films. A 2.45-GHz magnetron from a commercial microwave oven is used as the microwave power source. A conventional mixture of 0.2% methane in hydrogen is ionized in a bell jar reaction chamber located within a simple microwave cavity. By using a small hydrogen reservoir adjacent to the gas supply, an empty hydrogen tank can be replaced without interrupting film synthesis or causing any drift in plasma characteristics. Hence films can be deposited continuously for arbitrarily long periods while storing only a 24-h supply of explosive gases. System interlocks provide safe start-up and shut-down and allow unsupervised operation. Here we describe the electrical, microwave, and mechanical aspects of the system, and summarize the performance of the facility as used to reproducibly synthesize high quality diamond thin films.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3095-3098 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Triggering systems for vacuum arc plasma sources and ion sources have been developed that make use of a gaseous trigger discharge in a strong magnetic field. Two kinds of trigger discharge configurations have been explored, a Penning discharge and a magnetron discharge. The approach works reliably for low gas pressure in the vacuum arc environment and for long periods of operation between required maintenance: pressures in the mid-10−6 Torr range and for (approximately-greater-than)106 pulses. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 959-961 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A pulsed magnetic field of up to 10 kG was incorporated into a vacuum arc ion source. The field was established by a small coil surrounding the arc discharge region, powered by either an additional power supply (capacitor bank) or by the arc power supply (arc current and coil current in series). This addition has led to a number of improvements in source performance: The mean charge state of the metal ions produced was enhanced by a factor of up to 2, for 30 different cathode materials from carbon to bismuth; hybrid metal/gaseous ion beams could be generated when an additional gas (nitrogen, oxygen, or argon) was admitted into the source, with gaseous ion fraction as high as 50%; triggering of the source could be done by a very long lifetime gaseous predischarge technique. We also report on the use of a wire mesh to stabilize the plasma emission surface at the extractor as a means for achieving a flat beam current characteristic as a function of extraction voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 801-803 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed several different embodiments of repetitively pulsed vacuum arc metal plasma gun, including miniature versions, multicathode versions that can produce up to 18 different metal plasma species between which one can switch, and a compact high-duty cycle well-cooled version, as well as a larger dc gun. Plasma guns of this kind can be incorporated into a vacuum arc ion source for the production of high-energy metal ion beams, or used as a plasma source for thin film formation and for metal plasma immersion ion implantation and deposition. The source can also be viewed as a low-energy metal ion source with ion drift velocity in the range 20–200 eV depending on the metal species used. Here we describe the plasma sources that we have developed, the properties of the plasma generated, and summarize their performance and limitations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the "anode'' plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 956-958 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Conventional ion sources generate energetic ion beams by accelerating the plasma-produced ions through a voltage drop at the extractor, and since it is usual that the ion beam is to propagate in a space which is at ground potential, the plasma source is biased at extractor voltage. For high ion beam energy the plasma source and electrical systems need to be raised to high voltage, a task that adds considerable complexity and expense to the total ion source system. We have developed a system which though forming energetic ion beams at ground potential as usual, operates with the plasma source and electronics at ground potential also. Plasma produced by a nearby source streams into a gridded chamber that is repetitively pulsed from ground to high positive potential, sequentially accepting plasma into its interior region and ejecting it energetically. We call the device a peristaltic ion source. In preliminary tests we've produced nitrogen and titanium ion beams at energies from 1 to 40 keV. Here we describe the philosophy behind the approach, the test embodiment that we have made, and some preliminary results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 200-202 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of the charge state distributions of ions formed in a vacuum arc plasma in a magnetic field. A vacuum arc ion source was used for plasma formation and ion beam extraction, and the charge state spectra were investigated using both magnetic and time-of-flight charge state diagnostics. We find that the charge states of all of the metal species investigated are significantly increased by a magnetic field of up to 6 kG. New high ion charge states are created, and the mean of the charge state distribution is increased by about 30% at 3.75 kG and 50% at 6 kG. The results are important fundamentally as well as being of relevance to vacuum arc ion source applications such as ion implantation and accelerator injection. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2417-2419 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We are developing an embodiment of metal vapor vacuum arc (Mevva) ion source which will operate dc and have a very large area beam. In preliminary testing, a dc titanium ion beam was formed with a current of approximately 0.6 A at an extraction voltage of 9 kV (about 18 keV ion energy, by virtue of the ion-charge state distribution) using an 18-cm-diameter set of multiaperture extraction grids. Separately, we have tested and formed a beam from a 50-cm-diameter (2000 cm2) set of grids using a pulsed plasma gun. This configuration appears to be very efficient in terms of plasma utilization, and we have formed beams with a diameter of 33 cm (FWHM) and ion current up to 7 A at an extraction voltage of 50 kV (about 100 keV mean ion energy) and up to 20 A peak at the current overshoot part of the beam pulse. Here we describe this part of our Mevva development program and summarize the results obtained to date.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 57 (2002), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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