Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Geometrical theory of critical thickness and relaxation in strained-layer growth (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3038-3045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the growth of pseudomorphic strained layers, the critical thickness is the thickness up to which relaxation does not occur and beyond which relaxation occurs by plastic deformation of the layer. Previous theories have concentrated on the strain energy and kinetics of dislocation formation. We present a purely geometrical argument which predicts critical thicknesses and also predicts how relaxation progresses with increasing thickness. We find that the critical thickness, in monolayers, is approximately the reciprocal of the strain. Some relaxation occurs abruptly at critical thickness, and further relaxation is hyperbolic with thickness. The model can also handle multilayer structures. If all the layers have the same sign of strain, the model predicts that relaxation will occur at the lowest interface. These results are found to be in good agreement with experimental observations of dislocations in epitaxial structures of InGaAs grown on GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349335
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    On the origin of misfit dislocations in InGaAs/GaAs strained layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3163-3168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InxGa1−xAs/GaAs (x≤0.25) strained layers grown by molecular-beam epitaxy have been examined by plan-view transmission electron microscopy. Evidence is presented for the existence of two critical thicknesses, corresponding to the turnover of threading disloca- tions and the nucleation of new dislocations. From a quantitative analysis of dislocation intersections it is deduced that not all interfacial dislocations act to relieve the misfit strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346390
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Evidence of point defect supersaturation during Zn diffusion in InP single crystals (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2843-2845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of defects during Zn diffusion into undoped and semi-insulating Fe-doped InP single crystals at 700 °C was observed by transmission electron microscopy for various diffusion conditions. Agglomerates of predominantly perfect interstitial-type dislocation loops, dislocations, and small indium precipitates inside voids are observed in the Zn-diffused crystal region. In addition, large planar arrays of precipitates are formed by climbing dislocations. From these observations it is concluded that the incorporation of Zn on In sublattice sites creates a supersaturation of In self-interstitials which is relieved by dislocation loop formation leading to a supersaturation of P vacancies and void formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358698
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Solid neon sources for plasmas and x-ray lasers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 471-472 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A thin layer of frozen neon is condensed onto a cryogenically cooled substrate for use in generating a neon plasma for x-ray laser research. The freezing process and quasiequilibrium state of the layer are discussed. Spectral purity of a neon plasma formed by laser irradiation has been demonstrated. Control of the layer thinness is possible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138526
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Plastic relaxation of InGaAs grown on GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3390-3392 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the plastic relaxation of InGaAs layers grown above critical thickness on GaAs substrates. The relaxation is accurately hyperbolic, proportional to the reciprocal of the layer thickness, in agreement with a recent geometrical theory of critical thickness [D. J. Dunstan, S. Young, and R. H. Dixon, J. Appl. Phys. 70, 3038 (1991)]. At large thicknesses, work hardening is observed which leads to a residual strain dependent on the original misfit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105684
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    X-RAY LASER RESEARCH: GUIDELINES AND PROGRESS AT THE NAVAL RESEARCH LABORATORY (1976)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 267 (1976), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1976.tb41593.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...