Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 4812-4815
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
By studying the properties of nondopant impurities (P and In matrix elements, and Fe deep impurity) implanted Zn-doped p+-InP (p∼7×1017 holes cm−3) before and after varied annealing treatments (conventional furnace and rapid thermal anneals), we show the following; (i) the implantation-induced defects lead to electrical compensation in the bulk of InP far beyond the implanted regions; (ii) the compensating centers result from a direct interaction between fast diffusing defects (both during implantation and annealing processes) and Zn atoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338344
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