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  • 1
    Electronic Resource
    Electronic Resource
    SiAs related photoluminescence emissions in low-temperature AlxGa1−xAs grown by molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1498-1501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence emission attributed to (SiAs-VAs) at 1.77 eV at 77 K has been previously observed in annealed Si-doped Al0.3Ga0.7As layers grown by molecular beam epitaxy at 680 °C. An emission with similar characteristics has now been observed in as-grown samples fabricated at lower temperatures. New results render the attribution of the deep PL emission to the pair (SiIII-SiAs) more likely. The possibility of a heat treatment producing the same defect as a low-temperature molecular beam epitaxy growth is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351716
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  • 2
    Electronic Resource
    Electronic Resource
    Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser-modulator integration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5638-5641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the potentiality of a phosphorus-doped silicon oxide (SiO:P) carrier-free disordering source for applications in photonic devices integration schemes. This is accomplished in three successive steps by employing an InGaAsP/InGaAsP structure with compressively strained wells and lattice-matched barriers designed for operation around ∼1.55 μm. First of all, we showed that the SiO:P encapsulant offers a good control over a wide range of disorder (blue shifts as high as ∼150 meV). Later on, the high optical quality of the disordered regions is demonstrated by detecting 300 K excitonic features in moderately blue-shifted (∼40 meV) samples. And, finally, a first attempt of its application in integration technology is made by realizing a monolithic composite of a distributed feedback laser and a quantum-confined stark effect electroabsorption modulator operating around 1.54 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359688
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  • 3
    Electronic Resource
    Electronic Resource
    Optical probing of intermixing in GaAs-AlGaAs multiquantum wells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2968-2970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that a combination of low-temperature photoluminescence and luminescence excitation spectroscopies together with appropriate modelization can provide the precise information needed for a thorough control of interdiffusion in quantum well structures. A fit of observed and calculated transition energies up to five energy levels, using the interdiffusion length as a unique parameter, is considered. The potentiality of this procedure to fully characterize the interdiffusion process is illustrated by considering the examples of lightly and heavily intermixed GaAs-AlGaAs multiquantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354606
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial-band discontinuities for strained layers of InxGa1−xAs grown on (100) GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 812-815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of excitonic transitions in pseudomorphic single quantum wells of InxGa1−xAs grown on a GaAs substrate is presented. The experimental data are obtained by the in-plane photocurrent spectroscopy technique. The interpretation, which is based on the deformation potential and elastic theories, includes valence-band mixing with no adjustable parameters. The present experimental results, and those compiled from recently published data, are well interpreted from a unique set of measured parameters. From calculations and experiments it emerges that the light holes confine in the strained ternary for all In fractions below 0.83.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347369
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of different Si-related photoluminescence emissions involved in a deep broadband in Al0.3Ga0.7As (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7013-7018 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed photoluminescence study of a deep broadband emission as a function of the dopant concentration is conducted in molecular-beam epitaxy-grown silicon-doped Al0.3Ga0.7As single layers. The deep broadband which is correlated to the Si concentration consists of several emissions among which three are suggested to be due to different Si complexes. The effects of annealing the samples contributed immensely to this investigation. A model to explain the direct and indirect participations of SiAs in the formation of Si complexes during heat treatment is proposed. The photoluminescence is complemented by the Hall-effect, capacitance, and secondary-ion-mass spectroscopy measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345047
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  • 6
    Electronic Resource
    Electronic Resource
    New silicon-related deep broadband luminescence emission in Al0.3Ga0.7As epitaxial layers (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 444-447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence spectra of variously silicon-doped Al0.3Ga0.7As (Al0.3Ga0.7As@B: Si) single layers grown by molecular-beam epitaxy were investigated as a function of silicon effusion-cell temperature. A correlation between silicon incorporation as a complex involving SiAs and the existence of a deep broadband emission is suggested. To achieve this, in addition to photoluminescence, Hall effect, capacitance, and secondary ion mass spectroscopy measurements were also performed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341216
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  • 7
    Electronic Resource
    Electronic Resource
    Defect-induced compensation in the bulk of implanted indium phosphide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4812-4815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By studying the properties of nondopant impurities (P and In matrix elements, and Fe deep impurity) implanted Zn-doped p+-InP (p∼7×1017 holes cm−3) before and after varied annealing treatments (conventional furnace and rapid thermal anneals), we show the following; (i) the implantation-induced defects lead to electrical compensation in the bulk of InP far beyond the implanted regions; (ii) the compensating centers result from a direct interaction between fast diffusing defects (both during implantation and annealing processes) and Zn atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338344
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  • 8
    Electronic Resource
    Electronic Resource
    Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1029-1035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on Cr, Mn, Fe, and Zn redistributions either in undoped and unimplanted, or in doped and implanted indium phosphide substrates. Depth profiles, obtained by secondary ion mass spectrometry, demonstrate that residual impurities, as well as dopants, redistribute during thermal processing and that several parameters govern simultaneously the observed phenomena. Results are interpreted in terms of implantation-related damage and thermally generated defects, solubility modifications induced by the position of the Fermi level, p-n junction-related electric fields, and pure diffusion mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334543
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence properties of high-quality GaAs layers grown by molecular-beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 503-508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) measurements have been performed on several molecular-beam epitaxial high-quality GaAs layers showing varied electrical characteristics (nominally undoped and intentionally doped n or p type). This work is carried out with a view to investigate the influence of the centers responsible for the defect–bound-exciton emissions (d,x) on the electrical properties of the layers. After a systematic study of the luminescence properties of the d,x emissions as a function of the electrical nature (doped n or p type), residual p doping level, PL excitation intensity, and sample temperature, we came to the following conclusion: In addition to the prominent residual carbon acceptors, at least a part of p conduction in nominally undoped p-type layers could come from the centers responsible for the d,x emission at 1.5109±0.0003 eV. This suggestion is tentatively ascertained by detecting an acceptor emission at ∼1.496±0.001 eV, shallower than the carbon acceptor about 3 meV. All these results in addition to those related to the detection of deeper acceptors in the spectral range 1.46–1.49 eV are presented and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334782
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3054-3056 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Accurate measurements of the InP refractive index as a function of free-carrier doping are reported at 1.3 and 1.5 μm, the two strategic wavelengths for optical communications. A total of 21 samples with different N- and P-doping levels have been measured using a novel and simplified grating-coupling technique. In contrast to the conventional method, this only involves the use of a directly etched diffraction grating on the sample surface, thereby avoiding the necessity of a specific guiding layer. The measured index, in agreement with earlier predictions, decreases by more than 0.05 when the N doping is increased from below 1015 to about 1019 electrons per cubic centimeter. This effect, however, is much less pronounced with P doping than with N doping. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116837
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