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  • 1
    Electronic Resource
    Electronic Resource
    The combination of high-temperature sputtering with excimer laser planarization for submicrometer contact via filling (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1599-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the use of high-temperature sputtering in conjunction with excimer laser planarization for planarizing Al alloy surfaces and filling submicrometer, high aspect ratio (∼1–3) contact vias. In general, the process window for the complete contact filling increased significantly with the increasing sputtering temperature, and decreased with shrinking contact/via geometry. Better as-deposited metal step coverage and profile obtained at higher sputtering temperatures were identified as the key parameters contributing to this significant improvement in the process window. The process window achieved by this combined process is significantly wider than that obtained by high-temperature sputtering alone. In addition, the poor surface morphology generally observed for the Al alloy films sputtered at elevated temperatures is significantly improved due to recrystallization during laser reflow.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351676
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Antireflection coatings for advanced semiconductor device metallization using laser reflow and chemical mechanical planarization (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1978-1980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated titanium tungsten (TiW), titanium nitride (TiN), and chemical vapor deposited (CVD) tungsten (W) films as antireflection coatings (ARC) on aluminum (Al) alloy films to widen the laser planarization process window for contact via filling. ARCs lowered the minimum laser fluence required to accomplish complete contact filling and the maximum laser fluence before the onset of optical ablation, resulting in a significant increase in the process window. This increase closely correlated with the optical and thermal properties of the ARCs. The observed increase in resistivity of laser processed Al films due to intermixing with the ARCs does not preclude its use as via stud metal. A newly developed Al plug technology utilizing chemical mechanical polishing to remove the laser processed film from the surface is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106155
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Dishing effects in a chemical mechanical polishing planarization process for advanced trench isolation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1344-1346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first detailed study of dishing effects in chemical mechanical polishing (CMP) of oxide films, observed during the development of an advanced CMP-only trench isolation process. The degree of dishing has been determined for field widths ranging from 0.3 μm to 4 mm and was found to be highly pattern geometry (field width) sensitive, increasing from ∼0 nm at a field width of 5 μm and below to 200 nm at 4 mm. Although this dishing effect makes complete planarization in a large field oxide region (on the order of 1 mm) difficult, it poses no serious problem for trench isolation in narrow field regions due to its reduced effect at small field geometries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107586
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    Paper (German National Licenses)
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