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  • 1
    Electronic Resource
    Electronic Resource
    The combination of high-temperature sputtering with excimer laser planarization for submicrometer contact via filling (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1599-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have systematically investigated the use of high-temperature sputtering in conjunction with excimer laser planarization for planarizing Al alloy surfaces and filling submicrometer, high aspect ratio (∼1–3) contact vias. In general, the process window for the complete contact filling increased significantly with the increasing sputtering temperature, and decreased with shrinking contact/via geometry. Better as-deposited metal step coverage and profile obtained at higher sputtering temperatures were identified as the key parameters contributing to this significant improvement in the process window. The process window achieved by this combined process is significantly wider than that obtained by high-temperature sputtering alone. In addition, the poor surface morphology generally observed for the Al alloy films sputtered at elevated temperatures is significantly improved due to recrystallization during laser reflow.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351676
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Reactive ion etching of diamond (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 437-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reliable means of removing surface layers of diamond is of significant importance for microelectronics as well as for other applications such as polishing of the diamond surface. Preliminary studies using reactive ion etching with O2 and H2 showed etching rates of the order of 560 A(ring)/min for thin carbon films and 350 A(ring)/min for natural type II-A diamonds using 300 eV oxygen ions. Addition of a substantial percentage of Ar to oxygen in the reaction chamber did not affect the etching rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101890
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Doping of diamond by coimplantation of carbon and boron (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1397-1399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have implanted boron ions into insulating natural diamonds which were predamaged by carbon ion implantation in order to enhance the doping efficiency. All implantations were performed at liquid-nitrogen temperature. Subsequent rapid thermal annealing at 1100 °C produced strong new optical absorption bands near 1060 cm−1, and a sharp absorption at 2962 cm−1 (0.37 eV) which is close to that attributed to substitutional boron in type IIB diamond. We obtained resistivity of the order of 100 Ω cm and carrier activation energy of 0.1 eV for a sample implanted with 2×1015 C and 3×1014 B per cm2 , indicating a high substitutional fraction of boron atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101605
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Antireflection coatings for advanced semiconductor device metallization using laser reflow and chemical mechanical planarization (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1978-1980 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated titanium tungsten (TiW), titanium nitride (TiN), and chemical vapor deposited (CVD) tungsten (W) films as antireflection coatings (ARC) on aluminum (Al) alloy films to widen the laser planarization process window for contact via filling. ARCs lowered the minimum laser fluence required to accomplish complete contact filling and the maximum laser fluence before the onset of optical ablation, resulting in a significant increase in the process window. This increase closely correlated with the optical and thermal properties of the ARCs. The observed increase in resistivity of laser processed Al films due to intermixing with the ARCs does not preclude its use as via stud metal. A newly developed Al plug technology utilizing chemical mechanical polishing to remove the laser processed film from the surface is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106155
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  • 5
    Electronic Resource
    Electronic Resource
    Severe epistaxis – throat pack and airway inspection are essential (2000)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 55 (2000), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2000.01425-41.x
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