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  • 1
    Electronic Resource
    Electronic Resource
    Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2202-2204 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have recently reported the occurrence of phase separation in InxGa1−xN samples with x〉0.25. Theoretical studies have suggested that InxGa1−xN can phase-separate asymmetrically into a low InN% phase and an ordered high InN% phase. In this letter, we report on the existence of simultaneous phase separation and ordering of InxGa1−xN samples with x〉0.25. In these samples, phase separation was detected by both transmission electron microscopy selected area diffraction (TEM-SAD) and x-ray diffraction. Ordering was detected by both imaging and TEM-SAD. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124964
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  • 2
    Electronic Resource
    Electronic Resource
    Criterion for blocking threading dislocations by strained buffer layers in GaAs grown on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An energy model has been used to calculate the minimum critical thickness in strained-layer superlattices that is required to block threading dislocations. The model calculates the total change in the system energy that results from the presence of a bent dislocation segment at the strained interface. The calculations show that a threading dislocation has to overcome an energy barrier before gliding along the strained-layer interface becomes favorable. The model predicts that the process of blocking threading dislocations by strained-layer structures can be thermally activated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102094
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of AlGaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 400-402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) has been employed to grow AlGaAs in the temperature range 550–700 °C. Monolayer growth was achieved independent of the column III flux. Al incorporates during ALE more efficiently than in metalorganic chemical vapor deposition (MOCVD). The ALE films grown at low temperature have superior photoluminescence properties when compared with the MOCVD-grown films. The as-grown ALE films are p type with carrier concentrations in the 1017–1019/cm3 range, depending on the growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103675
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  • 4
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of GaInP ordered alloy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1172-1174 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the successful growth of ordered GaInP by atomic layer epitaxy on a GaAs substrate. The growth was achieved by alternate exposures to TEI, PH3, TMGa, and PH3 fluxes, and epilayers were found to closely match the GaAs substrate irrespective of the growth conditions. Room-temperature photoreflectance results indicate a band gap of 1.78 eV, the lowest value yet reported for such ordered alloys. Photoluminescence shows an anomalous temperature dependence behavior and transmission electron microscopy studies indicate that ordering takes place preferentially on (111) alternating planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102553
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  • 5
    Electronic Resource
    Electronic Resource
    Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high defect density in GaAs grown on Si can be reduced by the combined use of the strained superlattices (InGaAs-GaAsP) and annealing. The strained-layer superlattice (SLS) bends the dislocations and acts as a medium for dislocations interactions, and annihilations. Highly strained SLS (∼2%) is required to bend the dislocations and keep them bent at the SLS interfaces. The SLS coupled with annealing permits a remarkable reduction of threading dislocation density. Annealing provides the energy for threading dislocations to interact with the SLSs and improves their efficiency significantly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101581
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of the Ga-As-In-As superalloy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ga-As-In-As superalloy has been grown by atomic epitaxy on InP substrates. This has been achieved by sequential exposure of the substrate to trimethylgallium, arsine, triethylindium, and arsine. The thickness of the deposited film is in excellent agreement with the predicted value based on the number of exposure cycles. These results demonstrate that atomic layer epitaxy offers the ultimate control for depositing thin films. The superalloy films have been characterized by transmission electron microscopy and photoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98484
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  • 7
    Electronic Resource
    Electronic Resource
    Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3672-3677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs-GaAsP strained-layered superlattices have been used as a buffer layer to reduce the dislocation density in GaAs grown on Si substrates. These superlattices have been grown lattice matched to GaAs. Several interactions between the strain field of the strained layered superlattice [GaAs1−yPy-InxGa1−xAs (y=2x)] and the threading dislocations in GaAs/Si are observed. Mixed dislocations are strongly affected by the strain field of the superlattice, however, the interactions with the edge dislocations are less likely to occur. The stress field associated with the strained layered superlattice has a shear component that forces the 60° mixed dislocations to bend at the strained layered superlattice interfaces. Dislocations annihilation or repulsion are observed at the superlattice interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341409
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  • 8
    Electronic Resource
    Electronic Resource
    Positron annihilation study of an Fe14Nd2B-type permanent magnet alloy (abstract) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3780-3780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Dy-substituted Fe14Nd2B-type permanent magnet alloy (Crumax 32) has been studied by positron annihilation lifetime spectroscopy, and also magnetic coercivity and microstructural analysis, to evaluate the effects of thermal treatment of the material. The results of this study show that the room temperature lifetime spectra can be modeled accurately using a partially constrained three-component fit. The variations in lifetime spectra induced by thermal treatment of the sintered magnet can be correlated with the concomitant decreases in coercivity and with a decrease in the surface area of free α-Fe as indicated by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338643
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  • 9
    Electronic Resource
    Electronic Resource
    Permanent magnets based on replacing nickel with iron in Ni5Sm and its boride derivatives (abstract) (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3589-3589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In hexagonal Ni5R and its boride derivative Ni4RB (R=rare earth atom) nickel can be replaced with iron up to a limit of Fe:Ni=1:1 when R=Sm. At this ratio, FeNi is electronically equivalent to Co, and the magnetic properties are comparable to those of the cobalt compounds, but the moments and Curie temperatures tend to be lower. The moments and Curie temperatures increase with the Fe:Ni ratio. The Fe fraction can be extended when some of the Sm is replaced by Er, but never to the point of complete elimination of Ni. In the boron alloys the Co4RB type is still stable at Fe:Ni=1.67; above Fe:Ni=3:1, Fe14R2B dominates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338685
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  • 10
    Electronic Resource
    Electronic Resource
    Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1030-1032 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface structure of CeO2/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high-energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single-crystalline CeO2. However, during the deposition, a reaction between CeO2 and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO2−x and SiO2 layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO2 from CeO2−x and increased of the SiO2 thickness. The modified structure of CeO2/SiO2/Si is expected to be useful as a silicon-on-insulator structure since it maintains the desirable SiO2/Si interface followed by a single-crystal insulating film lattice-matched to Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113011
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