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  • 1
    Electronic Resource
    Electronic Resource
    Very-low-energy electron microscopy of doped semiconductors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2931-2933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope operated in the cathode lens mode, with incident electron energies (EP) as low as 15 eV. The doped regions of n+ (As, 2.5×1020 cm−3) and p+ (B, 8×1019 cm−3) on n-type silicon (∼1015 cm−3) show distinct contrast with electron energies of about 3 keV. The brightest region is n+ followed by p+, then the n-type substrate. The highest contrast for the p+ and n+ type regions is reached at about EP=300 and 15 eV, respectively. The contrast mechanisms are explained in terms of metal-semiconductor contact assuming an adventitious carbon film at the surface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415045
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  • 2
    Electronic Resource
    Electronic Resource
    Auger electron microscopy: An overview (1994)
    Springer
    Czechoslovak journal of physics 44 (1994), S. 173-193 
    Details
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The aim of Auger electron imaging is to obtain quantitative surface elemental distribution maps at high spatial resolution. The realization of this goal is complicated by many instrumental effects and by spurious data processing contributions giving rise to an image contrast unrelated to the specimen surface composition. The critical properties of scanning Auger microscopy that may cause such a false information or imaging artefacts are reviewed. Instrumental or data processing related effects appear in the case of the beam current variation, of the background slope effect, and of the use of a combined peak to background ratio. The second set of artefacts are mainly due to the significant differences between the penetration depth of the exciting primary electrons and the escape depth of the Auger electron signal. In this case the net effect is a surface elemental contrast which is dominated by the substrate or by the overlayer rather than by the surface under investigation. In addition, there are also topographical effects of the specimen under test which normally affect the Auger yield and hence the contrast in the image. Methods for the successful suppression of some of these artefacts are outlined. They are based on the creation of reference images from complementary signals acquired by additional detection channels in parallel with the Auger signal of interest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01694485
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  • 3
    Electronic Resource
    Electronic Resource
    Synchrotrons as sources for low energy Auger spectroscopy (1979)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 1 (1979), S. 135-137 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Unmonochromatized synchrotron sources are shown to be useful alternatives to electron beams in exciting low energy Auger transitions, and are likely to have applications where small concentrations of impurities in the surface of large samples are being investigated.
    Additional Material: 2 Tab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740010407
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  • 4
    Electronic Resource
    Electronic Resource
    Edge effects and image contrast in scanning Auger microscopy: A theory/experiment comparisonInvited paper presented at the Quantitative Surface Analysis (QSA-4) Conference, Teddington, UK, November 1986. (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 251-265 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The contribution of surface roughness to the artefacts present in images and line-scans from Scanning Auger Microscopes have been explored by Monte Carlo modelling and by experiment. The samples chosen for these studies are metal lines with sharp rectangular cross-sections deposited upon silicon substrates. The Monte Carlo simulation reveals shadowing effects due to the analyser/sample geometry and the obstruction due to the height of the overlayer line; forward scattering effects through the sidewall of the overlayer which lead to edge enhancements in the overlayer and substrate Auger signals; back-scattering effects which show up as an apparent broadening of the overlayer lines and substrate signal peaks appearing in the otherwise forbidden shadowed region. All of these effects are visible in the experimental results obtained for Si substrates with Al and with Au lines upon them. The experimental edge enhancement artefact is compared with the results of the simulation and good agreement is obtained. The difficulties which arise in the separation of topographical and chemical contrast are discussed and some suggestions for removal or reduction of the magnitude of these effects are outlined.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740110506
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  • 5
    Electronic Resource
    Electronic Resource
    Quantifying data from Auger spectra and images: Corrections (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 11 (1988), S. 633-633 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740111209
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  • 6
    Electronic Resource
    Electronic Resource
    The use of metal/semiconductor structures to develop MULSAM analytical techniquesThis paper forms the text of an invited talk read at ECASIA 91, 14-18 October 1991, Budapest, Hungary. (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 295-302 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The structures that can be fabricated by integrated circuit technology are very useful as well-characterized samples for testing image processing methodologies in multi-imaging instruments. Such samples are employed in the work described in this paper to evaluate schemes for correction of spectral background, substrate backscattering, surface topography and beam current fluctuation effects out of Auger images. The outstanding problems associated with the effects on Auger image contrast of sharp edges bounding overlayer structures are outlined and possible solutions are discussed.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180502
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  • 7
    Electronic Resource
    Electronic Resource
    Spectrum Synthesis Based on Non-linear Addition (1996)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 24 (1996), S. 163-172 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: One of the proposed approaches in the literature for quantitative analysis in AES is the linear addition of elementalspectra acquired in the direct energy mode (N(E) vs.E andE·N(E) vs.E). Quantification is then achieved by matching the shape of the added spectra to that of an unknown that was also collected under identical experimental conditions. However, it is shown here that the linear combination of elemental spectra employed in this approach has no real justification in theory. Any agreement with experiment found using this approach can therefore be of doubtful value. To avoid uncertainty, non-linear addition formulae that take the matrix effects (of the substrate) into consideration are developed. Results obtained with these formulae on AuCu alloys are described. The observed success of the linear addition is explained in terms of more rigorous non-linear addition.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 8
    Electronic Resource
    Electronic Resource
    Prediction of auger backscattering factors from measurements of spectral backgrounds (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 99-103 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The shape of N(E) has been obtained from a carefully characterized electron spectrometer for 24 different elements and compounds. The secondary electron cascade has been found to obey a form N(E) = AE-m. A and m have been measured and used together with a model of the energy distribution of rediffused primary electrons to calculate an Auger backscattering factor for each material when the primary energy is 20 keV. These calculations have been compared with backscattering coefficients measured at the carbon 1s binding energy in the same instrument on the same samples. The results show the backscattering factor to be linear in atomic number. The measurement of A and m from a spectrum can be used to estimate the backscattering factor within an estimated error of about ±0.05.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740090204
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  • 9
    Electronic Resource
    Electronic Resource
    Topographical contrast using scatter diagrams and correlated images form four backscattered electron detectors (1991)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 17 (1991), S. 203-208 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The York multi-spectral Auger electron microscope has been used to examine the correlations between four images measured simultaneously by collecting energetic backscattered electrons (BSEs) with four quadrants of an Si p-n junction BSE detector. Digital signal processing of the four images reveals the topography expected of the polyhedra on the surface of an Ag-coated, anisotropically etched Si sample. Scatter diagrams formed form the pair of topographical images appear as distorted stereographic projections of the distribution of local surface normals. The use of such projections via models of the scattering process is proposed as a means of correcting topographical artifacts in Auger, EDX and other chemically specific images.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740170407
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  • 10
    Electronic Resource
    Electronic Resource
    Automatic removal of substrate backscattering effects in Auger imaging and spectroscopy (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 984-990 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The York multi-spectral scanning Auger microscope has been used to investigate the correlations between Auger and backscattered electron images collected simultaneously from a electron spectrometer and the quadrants of a Sip-n junction backscattered electron detector. Digital signal processing of the four backscattered electron signals allows the calculation of the Auger backscattering factor at each pixel position, the division of which into the Auger image allows the removal of contrast due to subsurface composition variations. The method, which allows the quantification of complicated heterogeneous samples, requires no fitting parameters or prior knowledge regarding the sample.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740201209
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