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  • 1
    Electronic Resource
    Electronic Resource
    Tapered GaAs quantum wells and selectively contactable two-dimensional electron gases grown by shadow masked molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3578-3580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the use of shadow masks for the growth of GaAs quantum wells with spatially varying thicknesses. Using cathodoluminescence we observe a clear shift of the luminescence energy as a function of the lateral position. Combining masked and directional epitaxy, the quantum wells can be both laterally and vertically patterned. This way, stacked, two-dimensional electron gases are realized which can be selectively contacted without the use of complicated in-situ or post-growth patterning techniques. The quality of the epitaxial material grown through the openings of the masks is investigated by optical and electrical characterization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358594
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3032-3037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the role of the InAs/AlSb interface in determining the electron transport in AlSb/InAs/AlSb quantum wells grown by molecular-beam epitaxy. Because both anion and cation change across an InAs/AlSb interface, it is possible to grow such wells with two different types of interfaces, one with an InSb-like bond configuration, the other AlAs-like. Electron mobility and concentration were found to depend very strongly on the manner in which the quantum well's interfaces were grown, indicating that high mobilities are seen only if the bottom interface is InSb-like. An As-on-Al sites antisite defect model is postulated for bottom AlAs-like interfaces. Such antisites were used in subsequent samples as donors in modulation-doped high-mobility InAs/AlSb quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345426
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  • 3
    Electronic Resource
    Electronic Resource
    Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5239-5242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present data on the electron concentrations and mobilities in deep (≈1.3 eV) AlSb/InAs/AlSb quantum wells grown by molecular-beam epitaxy. High electron sheet concentrations of the order 1012 cm−2, found in the not-intentionally doped wells, indicate the presence of a deep donor in the AlSb barriers. Typical mobilities are between 22 000 and 28 000 cm2/V s at room temperature, increasing with decreasing temperature, and leveling out below 50 K at values between 175 000 and 330 000 cm2/V s. The temperature-independent low-temperature mobilities indicate a nonthermal scattering mechanism, possibly interface roughness scattering. Under illumination the wells exhibit a strong negative photoconductivity, which is explained as a natural consequence of the band structure of the wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343167
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  • 4
    Electronic Resource
    Electronic Resource
    Deep levels in Te-doped AlSb grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1551-1553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep electron traps in Te-doped AlSb have been investigated by deep level transient spectroscopy (DLTS). The diodes used for DLTS measurement were InAs/AlSb n-N isotype heterojunctions (quasi-Schottky barriers) with excellent rectification characteristics, grown on n+-GaAs substrates by molecular beam epitaxy. In the temperature range investigated, from 90 to 300 K, a number of electron trap levels were observed, not all of them well defined. The best-defined level was found to have a thermal electron emission energy of 0.26 eV, much shallower than the values 0.46–0.48 eV found by Takeda et al. for AlxGa1−xSb alloys with x≤05. This suggests a compositional dependence of the thermal emission energy for the deep electron trap level in AlxGa1−xSb in the range 0.4〈x≤1.0, in contrast to the constant value reported for AlxGa1−xAs. Temperature-dependent Hall effect measurements gave an ionization energy of 100 meV, suggesting that EDX decreases with increasing Al content, as in (Al,Ga)As. In a sample doped with Te at a level of 3.1×1017 cm−3, the trap concentration was 2.0×1017 cm−3, indicating that Te-doped AlSb has a much larger number of deep electron traps than n-AlAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103350
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical properties and band offsets of InAs/AlSb n-N isotype heterojunctions grown on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1893-1895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The MBE growth and selected properties of InAs/AlSb n-N isotype heterojunctions on n+-GaAs substrates are described. Because of a large conduction-band offset (1.35 eV), these junctions behave like Schottky barriers, with excellent rectification characteristics, despite the presence of a very high density (〉107 cm−2) of threading dislocations resulting from the large lattice mismatch (7%) between AlSb and the GaAs substrate. The forward I-V characteristics, corrected for series resistance, exhibit a large nonideality factor of about 1.8, suggesting that the main current flow is along a defect path, presumably related to the misfit dislocations. Reverse C-V characteristics exhibit a perfectly linear 1/C2 vs V plot, from which a conduction-band offset of 1.35±0.05 eV is deduced. This value is in excellent agreement with the value predicted from the known band offsets in InAs/GaSb and GaSb/AlSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101233
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  • 6
    Electronic Resource
    Electronic Resource
    Growth and characterization of serpentine superlattices in the GaSb-AlSb system (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1211-1213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of GaSb/AlSb serpentine superlattices (SSLs) on vicinal GaAs and GaSb substrates. Cross-sectional transmission electron microscopy confirms the SSL structure and shows excellent lateral uniformity, better than previous arsenide-SSLs. Photoluminescence (PL) measurements indicate a good-quality lateral superlattice with a spectral linewidth between 13 and 15 meV. Polarization-dependent PL measurements give a normalized linear polarization around 60%, the strongest that has been seen for SSL structures. Preliminary estimates suggest much better segregation between the Ga-rich and Al-rich regions than arsenide-SSLs, with the change in aluminum concentration Δx≈0.35.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109774
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  • 7
    Electronic Resource
    Electronic Resource
    Surface donor contribution to electron sheet concentrations in not-intentionally doped InAs-AlSb quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1854-1856 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron concentration in not-intentionally doped InAs/AlSb quantum wells is found to depend sensitively on the top AlSb barrier thickness even for barriers as thick as 100 nm. The carrier concentration increases as the thickness of this barrier is decreased. The analysis of the dependence of concentration on top barrier thickness indicates that the Fermi level is pinned at the surface of the sample, 850±50 meV below the conduction band edge of the AlSb top layer. Surface donors are the main contribution to the high carrier concentrations in these not-intentionally doped wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107189
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence from narrow InAs-AlSb quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3303-3305 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109053
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of the interface bonding type on the optical and structural properties of InAs-AlSb quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3392-3394 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs-AlSb short period superlattices were grown with both InSb-like or AlAs-like interfaces and their properties were studied using photoluminescence, x-ray diffraction, and transmission electron microscopy. A shift of 96 meV in the photoluminescence peak position is observed, with the peak from the sample with InSb-like interfaces being at a lower energy. The shift is interpreted as an interface band structure effect. X-ray diffraction patterns indicate that the sample with InSb-like interfaces grows pseudomorphically to the AlSb buffer layer, while the sample with AlAs-like interfaces is heavily dislocated. Transmission electron micrographs confirm the x-ray data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111285
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  • 10
    Electronic Resource
    Electronic Resource
    What Professionals Say (1975)
    Oxford, UK : Blackwell Publishing Ltd.
    The @journal of popular culture IX (1975), S. 0 
    Details
    ISSN: 1540-5931
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Ethnic Sciences
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0022-3840.1975.0901_232.x
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